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EDA-ModelleEasyEDA
Infineon IKZ50N65ES5
| Hersteller | |
| Herst.-Teilenr. | IKZ50N65ES5 |
| LCSC-Nr. | C536228 |
| Verp. | TO-247-4 |
| Kundennummer | |
| Hauptmerkm. | 274W 80A 650V TO-247-4 Single IGBTs RoHS |
| Datenblatt | Infineon IKZ50N65ES5 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-4 | |
| Pd - Power Dissipation | 274W | |
| Td(off) | 294ns | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 62ns | |
| Switching Energy(Eoff) | 880uJ | |
| Turn-On Energy (Eon) | 770uJ | |
| Input Capacitance(Cies) | 3.1nF@25V | |
| Output Capacitance(Coes) | 88pF | |
| Gate Charge(Qg) | 120nC@50A,15V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-4 | |
| Pd - Power Dissipation | 274W | |
| Td(off) | 294ns | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 62ns | |
| Switching Energy(Eoff) | 880uJ | |
| Turn-On Energy (Eon) | 770uJ | |
| Input Capacitance(Cies) | 3.1nF@25V | |
| Output Capacitance(Coes) | 88pF | |
| Gate Charge(Qg) | 120nC@50A,15V |
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| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 5.8062 | $ 5.81 |
| 240+ | $ 2.2478 | $ 539.47 |
| 480+ | $ 2.1691 | $ 1041.17 |
| 960+ | $ 2.1289 | $ 2043.74 |
Standardgehäuse240/Full Tube | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-4 | |
| Pd - Power Dissipation | 274W | |
| Td(off) | 294ns | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 62ns | |
| Switching Energy(Eoff) | 880uJ | |
| Turn-On Energy (Eon) | 770uJ | |
| Input Capacitance(Cies) | 3.1nF@25V | |
| Output Capacitance(Coes) | 88pF | |
| Gate Charge(Qg) | 120nC@50A,15V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | Infineon | |
| Verp. | TO-247-4 | |
| Pd - Power Dissipation | 274W | |
| Td(off) | 294ns | |
| Td(on) | 36ns | |
| Current - Collector(Ic) | 80A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@500uA | |
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Vce Saturation(VCE(sat)) | 1.35V@50A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 62ns | |
| Switching Energy(Eoff) | 880uJ | |
| Turn-On Energy (Eon) | 770uJ | |
| Input Capacitance(Cies) | 3.1nF@25V | |
| Output Capacitance(Coes) | 88pF | |
| Gate Charge(Qg) | 120nC@50A,15V |
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C536228 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IKZ50N65EH5 | Infineon | Ähnliche | TO-247-4 | 5 | $ 6.752 | ||
| IKY50N120CH3 | Infineon | Ähnliche | TO-247-4 | 17 | $ 16.2495 | ||
| FGH4L50T65SQD | onsemi | Ähnliche | TO-247-4LD | 1 | $ 5.2801 | ||
| IKZA50N65EH7XKSA1 | Infineon | Ähnliche | TO-247-4 | 3 | $ 22.376 | ||
| IKZA50N65RH5XKSA1 | Infineon | Ähnliche | TO-247-4 | 4 | $ 10.3846 |
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