Infineon FP10R12W1T4P_B11

Produttore	Infineon
Cod. Prod.	FP10R12W1T4P_B11
Cod. LCSC	C533968
Imballo	-
Numero Cliente
Attr. chiave	10A 1.2kV FS (Field Stop) IGBT Modules RoHS
Scheda Tecnica	Infineon FP10R12W1T4P_B11
Conformità RoHS	1 documenti disponibili

Specifiche del Prodotto

Tutto

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	-
Td(off)	180ns
Td(on)	45ns
Current - Collector(Ic)	10A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	24pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	90nC@15V
Vce Saturation(VCE(sat))	1.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	550uJ
Turn-On Energy (Eon)	900uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	600pF
Output Capacitance(Coes)	-

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	-
Td(off)	180ns
Td(on)	45ns
Current - Collector(Ic)	10A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	24pF
IGBT Type	FS (Field Stop)

Tipo	Descrizione
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	90nC@15V
Vce Saturation(VCE(sat))	1.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	550uJ
Turn-On Energy (Eon)	900uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	600pF
Output Capacitance(Coes)	-

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Tutto

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	-
Td(off)	180ns
Td(on)	45ns
Current - Collector(Ic)	10A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	24pF
IGBT Type	FS (Field Stop)
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	90nC@15V
Vce Saturation(VCE(sat))	1.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	550uJ
Turn-On Energy (Eon)	900uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	600pF
Output Capacitance(Coes)	-

Tipo	Descrizione
Categoria	Discrete Semiconductors/Transistors/IGBTs/IGBT Modules
Produttore	Infineon
Imballo	-
Pd - Power Dissipation	-
Td(off)	180ns
Td(on)	45ns
Current - Collector(Ic)	10A
Collector-Emitter Breakdown Voltage (Vces)	1.2kV
Reverse Transfer Capacitance (Cres)	24pF
IGBT Type	FS (Field Stop)

Tipo	Descrizione
Gate-Emitter Threshold Voltage (Vge(th)@Ic)	5.8V
Gate Charge(Qg)	90nC@15V
Vce Saturation(VCE(sat))	1.85V
Reverse Recovery Time(trr)	-
Switching Energy(Eoff)	550uJ
Turn-On Energy (Eon)	900uJ
Operating Temperature	-40℃~+150℃
Input Capacitance(Cies)	600pF
Output Capacitance(Coes)	-