HXY MOSFET SB1045L
| Fabricante | HXY MOSFETAsian Brands |
| N.º de pieza fab. | SB1045L |
| Nº LCSC | C5199106 |
| Emb. | TO-277 |
| Número de Cliente | |
| Atrib. clave | Standalone 45V 530mV@10A 10A TO-277 Single Diodes |
| Hoja de Datos | HXY MOSFET SB1045L |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | HXY MOSFET | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -50℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 45V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@10A | |
| Reverse Leakage Current (Ir) | 150uA@45V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 10A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | HXY MOSFET | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -50℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 45V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@10A | |
| Reverse Leakage Current (Ir) | 150uA@45V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 10A |
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | HXY MOSFET | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -50℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 45V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@10A | |
| Reverse Leakage Current (Ir) | 150uA@45V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 10A |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Fabricante | HXY MOSFET | |
| Emb. | TO-277 | |
| Operating Junction Temperature Range | -50℃~+150℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 45V |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 530mV@10A | |
| Reverse Leakage Current (Ir) | 150uA@45V | |
| Non-Repetitive Peak Forward Surge Current | 150A | |
| Current - Rectified | 10A |
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C5199106 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



