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EDA-ModelleEasyEDA
Nexperia BUK7Q7R5-40HJ
| Hersteller | |
| Herst.-Teilenr. | BUK7Q7R5-40HJ |
| LCSC-Nr. | C50344255 |
| Verp. | - |
| Kundennummer | |
| Hauptmerkm. | 44V 55A 3V 53W 6.2mΩ@10V 1 N-channel N-Channel Single FETs, MOSFETs |
| Datenblatt | Nexperia BUK7Q7R5-40HJ |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 44V | |
| Output Capacitance(Coss) | 326pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 6.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.192nF | |
| Gate Charge(Qg) | 17nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 44V | |
| Output Capacitance(Coss) | 326pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 53W | |
| RDS(on) | 6.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.192nF | |
| Gate Charge(Qg) | 17nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Vorrätig: 19
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Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0505 | $ 1.05 |
| 10+ | $ 1.0276 | $ 10.28 |
| 30+ | $ 1.0128 | $ 30.38 |
| 100+ | $ 0.9981 | $ 99.81 |
Standardgehäuse3000/Full Reel | ||
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Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 44V | |
| Output Capacitance(Coss) | 326pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Pd - Power Dissipation | 53W | |
| RDS(on) | 6.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.192nF | |
| Gate Charge(Qg) | 17nC | |
| Vgs | ±20V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Nexperia | |
| Verp. | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 44V | |
| Output Capacitance(Coss) | 326pF | |
| Current - Continuous Drain(Id) | 55A | |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Typ | Beschreibung | |
|---|---|---|
| Pd - Power Dissipation | 53W | |
| RDS(on) | 6.2mΩ@10V | |
| Reverse Transfer Capacitance (Crss@Vds) | 64pF | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.192nF | |
| Gate Charge(Qg) | 17nC | |
| Vgs | ±20V | |
| Type | N-Channel |
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Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |