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Modelli EDAEasyEDA
NCE NCE6080D
| Produttore | NCEAsian Brands |
| Cod. Prod. | NCE6080D |
| Cod. LCSC | C502834 |
| Imballo | TO-263-2L |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 60V 80A TO-263-2L |
| Scheda Tecnica | NCE NCE6080D |
| Parti alternative | 10 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-263-2L | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-263-2L | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
NCE6080D utilizes advanced trench technology and design to deliver excellent RDS(ON) at low gate charge. It is suitable for a wide range of applications.
Caratteristiche
Traduzione AI
- VDS = 60V, ID = 80A
- RDS(ON) < 8.5 mΩ (at VGS = 10V)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Superior package with good thermal dissipation performance
Applicazioni
Traduzione AI
- Pulse Width Modulation (PWM)
- Load Switch
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100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 102
102 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.6743 | $ 0.67 |
| 10+ | $ 0.5183 | $ 5.18 |
| 30+ | $ 0.4517 | $ 13.55 |
| 100+ | $ 0.3688 | $ 36.88 |
| 500+ | $ 0.3315 | $ 165.75 |
| 800+ | $ 0.3087 | $ 246.96 |
Package Standard800/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-263-2L | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A | |
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | NCE | |
| Imballo | TO-263-2L | |
| Output Capacitance(Coss) | 290pF | |
| Pd - Power Dissipation | 110W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 80A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.8V | |
| Reverse Transfer Capacitance (Crss@Vds) | 210pF | |
| RDS(on) | 7mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4nF | |
| Gate Charge(Qg) | 90nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
NCE6080D utilizes advanced trench technology and design to deliver excellent RDS(ON) at low gate charge. It is suitable for a wide range of applications.
Caratteristiche
Traduzione AI
- VDS = 60V, ID = 80A
- RDS(ON) < 8.5 mΩ (at VGS = 10V)
- High-density cell design for ultra-low RDS(ON)
- Fully characterized avalanche voltage and current ratings
- Excellent stability and consistency under high EAS
- Superior package with good thermal dissipation performance
Applicazioni
Traduzione AI
- Pulse Width Modulation (PWM)
- Load Switch
C502834 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|
| NCE82H110D | NCE | TO-263-2L | 23 | $ 1.2348 | ||
| NCEP058N85D | NCE | TO-263 | 1 | $ 0.7157 | ||
| NCEP033N85D | NCE | TO-263 | 7 | $ 1.6767 | ||
| NCE80H12D | NCE | TO-263-2L | 64 | $ 1.0528 | ||
| NCE82H140D | NCE | TO-263-2L | 1,581 | $ 1.0902 | ||
| NCEP090N20D | NCE | TO-263-2L | 0 | $ 3.4593 | ||
| NCEP055N85D | NCE | TO-263-2 | 0 | $ 0.8353 | ||
| NCEP070N12D | NCE | TO-263 | 0 | $ 0.9022 | ||
| NCEP055N10D | NCE | TO-263 | 0 | $ 0.8592 | ||
| NCE01H10D | NCE | TO-263-2 | 0 | $ 0.7728 |