- 핀아웃
- 풋프린트
Infineon IPP65R190CFD
| 제조업체 | |
| 제조사 품번 | IPP65R190CFD |
| LCSC 번호 | C501516 |
| 포장 | TO-220 |
| 고객 번호 | |
| 주요 제원 | MOSFET N-CH 700V 17.5A TO-220 |
| 데이터시트 | Infineon IPP65R190CFD |
| RoHS 준수 | 1개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 86pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 17.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.85nF | |
| Gate Charge(Qg) | 68nC@480V | |
| Vgs | ±20V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 86pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 17.5A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.85nF | |
| Gate Charge(Qg) | 68nC@480V | |
| Vgs | ±20V | |
| Type | N-Channel |
개요
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOS CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.
주요 특징
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Pb-free plating, Halogen free mold compound
응용 분야
- 650V CoolMOS CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom.
| 수량 | 단가 | 총액 |
|---|---|---|
| 1+ | $ 2.1547 | $ 2.15 |
| 10+ | $ 2.0425 | $ 20.43 |
| 50+ | $ 1.8514 | $ 92.57 |
| 100+ | $ 1.7835 | $ 178.35 |
| 500+ | $ 1.7519 | $ 875.95 |
| 1,000+ | $ 1.7377 | $ 1737.70 |
표준 패키지50/Full Tube | ||
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 86pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 17.5A | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.85nF | |
| Gate Charge(Qg) | 68nC@480V | |
| Vgs | ±20V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 86pF | |
| Pd - Power Dissipation | 151W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 700V | |
| Current - Continuous Drain(Id) | 17.5A |
| 타입 | 설명 | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 190mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.85nF | |
| Gate Charge(Qg) | 68nC@480V | |
| Vgs | ±20V | |
| Type | N-Channel |
개요
CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. 650V CoolMOS CFD2 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching, commutation and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.
주요 특징
- Ultra-fast body diode
- Very high commutation ruggedness
- Extremely low losses due to very low FOM Rdson*Qg and Eoss
- Easy to use/drive
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
- Pb-free plating, Halogen free mold compound
응용 분야
- 650V CoolMOS CFD2 is especially suitable for resonant switching PWM stages for e.g. PC Silverbox, LCD TV, Lighting, Server and Telecom.
C501516 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
대체 부품
| MPN | 제조사 | 대체 유형 | 포장 | 재고 현황 | 단가 | ||
|---|---|---|---|---|---|---|---|
| IPP65R190C6 | Infineon | 유사 제품 | TO-220 | 5 | $ 3.6944 | ||
| IPA65R190CFDXKSA1 | Infineon | 유사 제품 | TO-220-3 | 1 | $ 3.5802 | ||
| BMP65N190UC1 | Bestirpower | 유사 제품 | TO-220 | 248 | $ 0.97 | ||
| WTM22N65AP | WPMtek | 유사 제품 | TO-220 | 27 | $ 1.4392 | ||
| SP18HF65TQ | Siliup | 유사 제품 | TO-220-3L | 284 | $0.9774 $1.0859 |