ST STH315N10F7-6
| 제조업체 | |
| 제조사 품번 | STH315N10F7-6 |
| LCSC 번호 | C457491 |
| 포장 | H2PAK-6 |
| 고객 번호 | |
| 주요 제원 | 315W 100V 180A 2.3mΩ@10V 1 N-channel N-Channel H2PAK-6 Single FETs, MOSFETs RoHS |
| 데이터시트 | ST STH315N10F7-6 |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 1 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-6 | |
| Output Capacitance(Coss) | 3.5nF | |
| Ciss-Input Capacitance | 12.8nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 180nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-6 | |
| Output Capacitance(Coss) | 3.5nF | |
| Ciss-Input Capacitance | 12.8nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 180nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
These N-channel power MOSFETs feature STripFET™ F7 technology with an optimized trench gate structure for ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operations.
주요 특징
AI 번역
- Designed for automotive applications, AEC-Q101 qualified
- Among the lowest RDS(on) available on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for enhanced EMI immunity
- High avalanche ruggedness
응용 분야
AI 번역
- Switching applications
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
품절
재입고 알림
최소값: 1배수: 1판매 단위: Piece
BOM 목록에 추가
| 수량 | 단가(참고용) | 총액 |
|---|---|---|
| 1+ | $ 3.4007 | $ 3.40 |
| 10+ | $ 3.33 | $ 33.30 |
| 30+ | $ 3.2839 | $ 98.52 |
| 100+ | $ 3.2378 | $ 323.78 |
표준 패키지1000/Full Reel | ||
수량이 많을수록 더 좋은 가격?
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제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-6 | |
| Output Capacitance(Coss) | 3.5nF | |
| Ciss-Input Capacitance | 12.8nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 180nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | ST | |
| 포장 | H2PAK-6 | |
| Output Capacitance(Coss) | 3.5nF | |
| Ciss-Input Capacitance | 12.8nF | |
| Pd - Power Dissipation | 315W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 180A | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 2.3mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 180nC@50V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
These N-channel power MOSFETs feature STripFET™ F7 technology with an optimized trench gate structure for ultra-low on-resistance while reducing internal capacitance and gate charge, enabling faster and more efficient switching operations.
주요 특징
AI 번역
- Designed for automotive applications, AEC-Q101 qualified
- Among the lowest RDS(on) available on the market
- Excellent figure of merit (FoM)
- Low Crss/Ciss ratio for enhanced EMI immunity
- High avalanche ruggedness
응용 분야
AI 번역
- Switching applications
C457491 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



