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EDA-ModelleEasyEDA
Littelfuse/IXYS IXFH80N65X2
| Hersteller | |
| Herst.-Teilenr. | IXFH80N65X2 |
| LCSC-Nr. | C440794 |
| Verp. | TO-247 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 80A TO-247 |
| Datenblatt | Littelfuse/IXYS IXFH80N65X2 |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 5.01nF | |
| Ciss-Input Capacitance | 8.3nF | |
| Pd - Power Dissipation | 890W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 5.01nF | |
| Ciss-Input Capacitance | 8.3nF | |
| Pd - Power Dissipation | 890W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
LonFET™ power MOSFETs are manufactured using advanced superjunction technology, resulting in devices with extremely low on-resistance — ideally suited for applications requiring high power density and superior efficiency.
Merkmale
KI-Übersetzung
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
Anwendungen
KI-Übersetzung
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- PFC Circuits
- AC and DC Motor Drives
- Robotics and Servo Controls
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 88
88 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 10.1328 | $ 10.13 |
| 10+ | $ 8.8958 | $ 88.96 |
| 30+ | $ 6.9622 | $ 208.87 |
| 90+ | $ 6.3297 | $ 569.67 |
Standardgehäuse30/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 5.01nF | |
| Ciss-Input Capacitance | 8.3nF | |
| Pd - Power Dissipation | 890W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | Littelfuse/IXYS | |
| Verp. | TO-247 | |
| Output Capacitance(Coss) | 5.01nF | |
| Ciss-Input Capacitance | 8.3nF | |
| Pd - Power Dissipation | 890W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 80A | |
| Reverse Transfer Capacitance (Crss) | 1.6pF | |
| RDS(on) | 38mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 140nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
LonFET™ power MOSFETs are manufactured using advanced superjunction technology, resulting in devices with extremely low on-resistance — ideally suited for applications requiring high power density and superior efficiency.
Merkmale
KI-Übersetzung
- International Standard Packages
- Low RDS(ON) and QG
- Avalanche Rated
- Low Package Inductance
- High Power Density
- Easy to Mount
- Space Savings
Anwendungen
KI-Übersetzung
- Switch-Mode and Resonant-Mode Power Supplies
- DC-DC Converters
- PFC Circuits
- AC and DC Motor Drives
- Robotics and Servo Controls
C440794 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| SP77MF65TF | Siliup | Ähnliche | TO-247 | 123 | $3.9044 $4.5934 | ||
| IXTH80N65X2 | Littelfuse/IXYS | Ähnliche | TO-247 | 28 | $ 9.3708 | ||
| MS100N60ICC0 | MASPOWER | Ähnliche | TO-247 | 19 | $ 8.4803 | ||
| IPW65R037C6FKSA1 | Infineon | Ähnliche | TO-247-3 | 3 | $ 18.8844 | ||
| BMW65N028UA1 | Bestirpower | Ähnliche | TO-247-3L | 81 | $ 3.8234 |