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Zdjęcia poglądowe
Modele EDAEasyEDA
Infineon IAUCN10S7L180ATMA1
| Producent | |
| Nr części prod. | IAUCN10S7L180ATMA1 |
| Nr LCSC | C43311525 |
| Opak. | PG-TDSON-8 |
| Numer Klienta | |
| Klucz. cechy | 58W 100V 39A 16.1mΩ@10V 1 N-channel N-Channel PG-TDSON-8 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | Infineon IAUCN10S7L180ATMA1 |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | PG-TDSON-8 | |
| Output Capacitance(Coss) | 272pF | |
| Ciss-Input Capacitance | 668pF | |
| Pd - Power Dissipation | 58W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 39A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 16.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | PG-TDSON-8 | |
| Output Capacitance(Coss) | 272pF | |
| Ciss-Input Capacitance | 668pF | |
| Pd - Power Dissipation | 58W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 39A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 16.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- OptiMOS™ power MOSFET for automotive applications
- N-channel – Enhancement mode – Logic level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 rated up to 260°C peak reflow temperature
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
Zastosowania
Tłumaczenie AI
- General automotive applications.
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 202
202 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.2937 | $ 1.29 |
| 10+ | $ 1.0786 | $ 10.79 |
| 30+ | $ 0.9604 | $ 28.81 |
| 100+ | $ 0.8258 | $ 82.58 |
| 500+ | $ 0.7667 | $ 383.35 |
| 1,000+ | $ 0.7388 | $ 738.80 |
Standardowa Obudowa5000/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | PG-TDSON-8 | |
| Output Capacitance(Coss) | 272pF | |
| Ciss-Input Capacitance | 668pF | |
| Pd - Power Dissipation | 58W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 39A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 16.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Infineon | |
| Opak. | PG-TDSON-8 | |
| Output Capacitance(Coss) | 272pF | |
| Ciss-Input Capacitance | 668pF | |
| Pd - Power Dissipation | 58W | |
| Operating Temperature | -55℃~+175℃ | |
| Configuration | - | |
| Drain to Source Voltage | 100V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 39A | |
| Reverse Transfer Capacitance (Crss) | 7pF | |
| RDS(on) | 16.1mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- OptiMOS™ power MOSFET for automotive applications
- N-channel – Enhancement mode – Logic level
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 rated up to 260°C peak reflow temperature
- 175°C operating temperature
- RoHS compliant
- 100% avalanche tested
Zastosowania
Tłumaczenie AI
- General automotive applications.
C43311525 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| BSZ096N10LS5 | Infineon | Podobne | TSDSON-8FL | 1,787 | $ 1.4084 | ||
| IAUZ40N10S5L120ATMA1 | Infineon | Podobne | TSDSON-8FL | 299 | $ 1.0759 | ||
| BSZ150N10LS3G | Infineon | Podobne | TSDSON-8FL | 51 | $ 1.5756 | ||
| ISC0802NLSATMA1 | Infineon | Podobne | TDSON-8 | 451 | $ 3.2406 | ||
| ISC032N12LM6ATMA1 | Infineon | Podobne | PG-TDSON-8FL | 1 | $ 4.7017 |