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EDA-ModelleEasyEDA
JSMSEMI IKA15N65H5-JSM
| Hersteller | JSMSEMIAsian Brands |
| Herst.-Teilenr. | IKA15N65H5-JSM |
| LCSC-Nr. | C42444740 |
| Verp. | TO-220F |
| Kundennummer | |
| Hauptmerkm. | IGBT 650V 30A TO-220F |
| Datenblatt | JSMSEMI IKA15N65H5-JSM |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 3 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-220F | |
| Td(off) | 30ns | |
| Pd - Power Dissipation | 91W | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 28.3pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@15A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 36ns | |
| Switching Energy(Eoff) | 570uJ | |
| Turn-On Energy (Eon) | 240uJ | |
| Input Capacitance(Cies) | 1.2703nF@25V | |
| Output Capacitance(Coes) | 78pF | |
| Gate Charge(Qg) | 42nC@15A,15V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-220F | |
| Td(off) | 30ns | |
| Pd - Power Dissipation | 91W | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 28.3pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@15A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 36ns | |
| Switching Energy(Eoff) | 570uJ | |
| Turn-On Energy (Eon) | 240uJ | |
| Input Capacitance(Cies) | 1.2703nF@25V | |
| Output Capacitance(Coes) | 78pF | |
| Gate Charge(Qg) | 42nC@15A,15V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Offers high breakdown voltage to 650V
- Low V cEsat
- Easy parallel switching capability due to positive temperature coefficient in VcEsat
- Very fast and soft antiparallel diode
- Qualified according to JEDEC for target applications
- Pb-Free lead plating
- RoHS and Halogen-Free compliant
Anwendungen
KI-Übersetzung
- UPS
- Air Condition
- Motor Drives
- PFC
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 98
98 Ab Lager, sofort versandfertig
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.0754 | $ 1.08 |
| 10+ | $ 0.8783 | $ 8.78 |
| 50+ | $ 0.7805 | $ 39.03 |
| 100+ | $ 0.6827 | $ 68.27 |
| 500+ | $ 0.6241 | $ 312.05 |
| 1,000+ | $ 0.5931 | $ 593.10 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-220F | |
| Td(off) | 30ns | |
| Pd - Power Dissipation | 91W | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 28.3pF | |
| IGBT Type | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@15A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 36ns | |
| Switching Energy(Eoff) | 570uJ | |
| Turn-On Energy (Eon) | 240uJ | |
| Input Capacitance(Cies) | 1.2703nF@25V | |
| Output Capacitance(Coes) | 78pF | |
| Gate Charge(Qg) | 42nC@15A,15V |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/IGBTs/Single IGBTs | |
| Hersteller | JSMSEMI | |
| Verp. | TO-220F | |
| Td(off) | 30ns | |
| Pd - Power Dissipation | 91W | |
| Td(on) | 12ns | |
| Current - Collector(Ic) | 30A | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Reverse Transfer Capacitance (Cres) | 28.3pF | |
| IGBT Type | - |
| Typ | Beschreibung | |
|---|---|---|
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.5V@250uA | |
| Operating Temperature | -55℃~+150℃ | |
| Vce Saturation(VCE(sat)) | 2.3V@15A,15V | |
| Collector Cut-Off Current (Ices) | - | |
| Reverse Recovery Time(trr) | 36ns | |
| Switching Energy(Eoff) | 570uJ | |
| Turn-On Energy (Eon) | 240uJ | |
| Input Capacitance(Cies) | 1.2703nF@25V | |
| Output Capacitance(Coes) | 78pF | |
| Gate Charge(Qg) | 42nC@15A,15V |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Offers high breakdown voltage to 650V
- Low V cEsat
- Easy parallel switching capability due to positive temperature coefficient in VcEsat
- Very fast and soft antiparallel diode
- Qualified according to JEDEC for target applications
- Pb-Free lead plating
- RoHS and Halogen-Free compliant
Anwendungen
KI-Übersetzung
- UPS
- Air Condition
- Motor Drives
- PFC
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| IKA15N65F5-JSM | JSMSEMI | Ähnliche | TO-220F | 176 | $0.9787 $1.0754 | ||
| IKA15N60T-JSM | JSMSEMI | Ähnliche | TO-220F | 100 | $ 0.6284 | ||
| SPF15N65T1T2TL-JSM | JSMSEMI | Ähnliche | TO-220F | 0 | $0.9220 $0.9705 |