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DOINGTER DOPF40N10-L
| Fabricante | DOINGTERAsian Brands |
| N.º de pieza fab. | DOPF40N10-L |
| Nº LCSC | C42441868 |
| Emb. | TO-220F |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 100V 40A TO-220F |
| Hoja de Datos | DOINGTER DOPF40N10-L |
| Cumplimiento RoHS | 2 documentos disponibles |
| Piezas alternativas | 1 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DOINGTER | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 441pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.615nF | |
| Pd - Power Dissipation | 38.5W | |
| Reverse Transfer Capacitance (Crss) | 7.8pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DOINGTER | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 441pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.615nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 38.5W | |
| Reverse Transfer Capacitance (Crss) | 7.8pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Características
Traducción por IA
- Drain-Source Voltage (VDS) = 100 V, Drain Current (ID) = 40 A, On-State Resistance (RDS(ON)) < 11 mΩ at VGS = 10 V (typical: 9.6 mΩ)
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
Aplicaciones
Traducción por IA
- Portable device load switch
- DC/DC converter
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DOINGTER | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 441pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.615nF | |
| Pd - Power Dissipation | 38.5W | |
| Reverse Transfer Capacitance (Crss) | 7.8pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | DOINGTER | |
| Emb. | TO-220F | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 100V | |
| Output Capacitance(Coss) | 441pF | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.615nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 38.5W | |
| Reverse Transfer Capacitance (Crss) | 7.8pF | |
| RDS(on) | 11mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 31.5nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Descripción
Traducción por IA
This N-channel MOSFET utilizes advanced SGT technology and design to deliver excellent on-resistance (RDS(on)) with low gate charge. It is suitable for a wide range of applications.
Características
Traducción por IA
- Drain-Source Voltage (VDS) = 100 V, Drain Current (ID) = 40 A, On-State Resistance (RDS(ON)) < 11 mΩ at VGS = 10 V (typical: 9.6 mΩ)
- Low gate charge
- RoHS-compliant devices available
- Advanced high cell density trench technology for ultra-low RDS(ON)
- Excellent package with superior thermal dissipation
Aplicaciones
Traducción por IA
- Portable device load switch
- DC/DC converter
C42441868 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |