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Modele EDAEasyEDA
VBsemi Elec SIS410DN-VB
| Producent | VBsemi ElecAsian Brands |
| Nr części prod. | SIS410DN-VB |
| Nr LCSC | C41370445 |
| Opak. | DFN-8-EP(3x3) |
| Numer Klienta | |
| Klucz. cechy | 20V 58A 1.5V 31.2W 5.7mΩ@2.5V 1 N-channel N-Channel DFN-8-EP(3x3) Single FETs, MOSFETs |
| Karta Katalogowa | VBsemi Elec SIS410DN-VB |
| Części alternatywne | 10 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN-8-EP(3x3) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 445pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 5.7mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.45nF | |
| Gate Charge(Qg) | 19.4nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN-8-EP(3x3) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 445pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 5.7mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.45nF | |
| Gate Charge(Qg) | 19.4nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- High power density DC/DC
- Synchronous rectification
- Embedded DC/DC
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.8616 | $ 0.86 |
| 200+ | $ 0.345 | $ 69.00 |
| 500+ | $ 0.3323 | $ 166.15 |
| 1,000+ | $ 0.3275 | $ 327.50 |
Standardowa Obudowa5000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN-8-EP(3x3) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 445pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 5.7mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.45nF | |
| Gate Charge(Qg) | 19.4nC@10V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | VBsemi Elec | |
| Opak. | DFN-8-EP(3x3) | |
| Drain to Source Voltage | 20V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 445pF | |
| Current - Continuous Drain(Id) | 58A | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | 31.2W | |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF | |
| RDS(on) | 5.7mΩ@2.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 1.45nF | |
| Gate Charge(Qg) | 19.4nC@10V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Trench power MOSFET
- 100% Rg and UIS tested
Zastosowania
Tłumaczenie AI
- High power density DC/DC
- Synchronous rectification
- Embedded DC/DC
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|
| SI7102DN-VB | VBsemi Elec | DFN3x3-8 | 15 | $0.5520 $0.6494 | ||
| SISA40DN-T1-GE3-VB | VBsemi Elec | DFN3x3-8 | 1 | $0.5520 $0.6494 | ||
| PXN6R2-25QLJ-VB | VBsemi Elec | DFN-8(3x3) | 10 | $0.6756 $0.7111 | ||
| PSMN6R1-25MLD,115-VB | VBsemi Elec | DFN-8(3x3) | 5 | $0.6726 $0.7079 | ||
| SI7106DN-T1-E3-VB | VBsemi Elec | DFN3x3-8 | 20 | $0.5304 $0.624 | ||
| FDMC2514SDC-VB | VBsemi Elec | DFN3x3-8 | 286 | $ 0.4884 | ||
| SIS376DN-T1-GE3-VB | VBsemi Elec | DFN-8-EP(3x3) | 0 | $ 0.8616 | ||
| SIS424DN-VB | VBsemi Elec | DFN-8-EP(3x3) | 0 | $ 0.8616 | ||
| SIS426DN-VB | VBsemi Elec | DFN-8-EP(3x3) | 0 | $ 0.8616 | ||
| SIS438DN-T1-GE3-VB | VBsemi Elec | DFN3x3-8 | 0 | $0.7940 $0.8357 |