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VBsemi Elec AP2320GN-HF-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | AP2320GN-HF-VB |
| Nº LCSC | C41370057 |
| Emb. | SOT-23 |
| Número de Cliente | |
| Atrib. clave | 100V 260mA 370mW 2.8Ω@10V 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs |
| Hoja de Datos | VBsemi Elec AP2320GN-HF-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 7pF | |
| Current - Continuous Drain(Id) | 260mA | |
| Ciss-Input Capacitance | 30pF | |
| Pd - Power Dissipation | 370mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 7pF | |
| Current - Continuous Drain(Id) | 260mA | |
| Ciss-Input Capacitance | 30pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 370mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 7pF | |
| Current - Continuous Drain(Id) | 260mA | |
| Ciss-Input Capacitance | 30pF | |
| Pd - Power Dissipation | 370mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | SOT-23 | |
| Drain to Source Voltage | 100V | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 7pF | |
| Current - Continuous Drain(Id) | 260mA | |
| Ciss-Input Capacitance | 30pF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 370mW | |
| Reverse Transfer Capacitance (Crss) | 2pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 500pC@4.5V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
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C41370057 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |