15% OFF
- Diagrama de pines
- Footprint
Imágenes ilustrativas
Modelos EDAEasyEDA
VBsemi Elec IXTH50N25T-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | IXTH50N25T-VB |
| Nº LCSC | C39832090 |
| Emb. | TO-247AC |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 250V 60A TO-247AC |
| Hoja de Datos | VBsemi Elec IXTH50N25T-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5nF | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 95nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 95nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Trench Power MOSFET
- Junction temperature 175 °C
- New low thermal resistance package
- RoHS compliant with Directive 2002/95/EC
Aplicaciones
Traducción por IA
- Industrial sector
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5nF | |
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 95nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-247AC | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 250V | |
| Output Capacitance(Coss) | 300pF | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 300W | |
| Reverse Transfer Capacitance (Crss) | 170pF | |
| RDS(on) | 40mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 95nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Trench Power MOSFET
- Junction temperature 175 °C
- New low thermal resistance package
- RoHS compliant with Directive 2002/95/EC
Aplicaciones
Traducción por IA
- Industrial sector
C39832090 Biblioteca EasyEDA
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |