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onsemi NTHL065N65S3F
| Hersteller | |
| Herst.-Teilenr. | NTHL065N65S3F |
| LCSC-Nr. | C398048 |
| Verp. | TO-247-3 |
| Kundennummer | |
| Hauptmerkm. | 337W 650V 46A 5V 65mΩ@10V 1 N-channel N-Channel TO-247-3 Single FETs, MOSFETs RoHS |
| Datenblatt | onsemi NTHL065N65S3F |
| RoHS-Konformität | 4 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Beschreibung
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems where miniaturization and higher efficiency are required. The body diode of the SUPERFET III FRFET MOSFET is optimized for excellent reverse recovery performance, eliminating the need for additional components and improving system reliability.
Merkmale
- 700 V @ TJ = 150°C
- Typical RDS(on) = 54 mΩ
- Ultra-low gate charge (typical Qg = 98 nC)
- Low effective output capacitance (typical Coss(eff.) = 876 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Anwendungen
- Telecom/Server Power Supplies - Industrial Power Supplies - EV Chargers - UPS/Solar
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 8.4492 | $ 8.45 |
| 10+ | $ 8.3305 | $ 83.31 |
| 30+ | $ 8.2524 | $ 247.57 |
| 90+ | $ 8.1727 | $ 735.54 |
Standardgehäuse30/Full Tube | ||
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | onsemi | |
| Verp. | TO-247-3 | |
| Output Capacitance(Coss) | 95pF | |
| Pd - Power Dissipation | 337W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 46A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Reverse Transfer Capacitance (Crss@Vds) | - | |
| RDS(on) | 65mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 4.075nF | |
| Gate Charge(Qg) | 98nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Beschreibung
SUPERFET III MOSFETs are a new series of high-voltage super-junction (SJ) MOSFETs utilizing charge balance technology, featuring excellent low on-resistance and low gate charge performance. This advanced technology is designed to minimize conduction losses, deliver superior switching performance, and withstand extremely high dv/dt rates. As a result, SUPERFET III MOSFETs are ideal for a wide range of power supply systems where miniaturization and higher efficiency are required. The body diode of the SUPERFET III FRFET MOSFET is optimized for excellent reverse recovery performance, eliminating the need for additional components and improving system reliability.
Merkmale
- 700 V @ TJ = 150°C
- Typical RDS(on) = 54 mΩ
- Ultra-low gate charge (typical Qg = 98 nC)
- Low effective output capacitance (typical Coss(eff.) = 876 pF)
- 100% avalanche tested
- Lead-free and RoHS compliant
Anwendungen
- Telecom/Server Power Supplies - Industrial Power Supplies - EV Chargers - UPS/Solar
C398048 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| STW56N65DM2 | ST | Ähnliche | TO-247-3 | 30 | $ 12.3436 | ||
| STW58N65DM2AG | ST | Ähnliche | TO-247 | 1 | $ 15.2122 | ||
| BMW65N065UC1 | Bestirpower | Ähnliche | TO247-3 | 172 | $ 2.2066 | ||
| WTM54N65FMP | WPMtek | Ähnliche | TO-247 | 30 | $ 3.1627 | ||
| GBS65060TOB | GOSEMICON | Ähnliche | TO-247 | 30 | $ 5.0836 |