Abbildung ähnlich
EDA-ModelleEasyEDA
ROHM DTB114EKFRAT146
| Hersteller | |
| Herst.-Teilenr. | DTB114EKFRAT146 |
| LCSC-Nr. | C3589050 |
| Verp. | TO-236-3(SOT-23-3) |
| Kundennummer | |
| Hauptmerkm. | 50V 56 500mA 200mW PNP 1 PNP Pre-Biased TO-236-3(SOT-23-3) Single, Pre-Biased Bipolar Transistors |
| Datenblatt | ROHM DTB114EKFRAT146 |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 500mA | |
| Output Voltage(VO(on)) | 300mV@50mA,2.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,300mV | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 500mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV@50mA,2.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,300mV | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors, R1 = R2 = 10kΩ
- Built-in bias resistors enable inverter circuit configuration without external input resistors (see internal circuit).
- Only ON/OFF state setting required during operation, simplifying circuit design.
- Complementary NPN type: DTD114K FRA
Anwendungen
KI-Übersetzung
- Inverter
- Interface
- Driver
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.1467 | $ 0.15 |
| 200+ | $ 0.0568 | $ 11.36 |
| 500+ | $ 0.0548 | $ 27.40 |
| 1,000+ | $ 0.0538 | $ 53.80 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 500mA | |
| Output Voltage(VO(on)) | 300mV@50mA,2.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,300mV | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors | |
| Hersteller | ROHM | |
| Verp. | TO-236-3(SOT-23-3) | |
| Current - Collector Cutoff | - | |
| Transition frequency(fT) | 250MHz | |
| Collector - Emitter Voltage VCEO | 50V | |
| Emitter-Base Voltage VEBO | - | |
| DC Current Gain | 56 | |
| Vce Saturation(VCE(sat)) | - | |
| Current - Collector(Ic) | 500mA |
| Typ | Beschreibung | |
|---|---|---|
| Output Voltage(VO(on)) | 300mV@50mA,2.5mA | |
| Input Resistor | 13kΩ | |
| Resistor Ratio | 1.2 | |
| Pd - Power Dissipation | 200mW | |
| Voltage - Input(Max)(VI(off)) | 500mV@100uA,5V | |
| Input Voltage (VI(on)@Ic,Vce) | 3V@10mA,300mV | |
| Operating temperature | - | |
| type | PNP | |
| Number | 1 PNP Pre-Biased |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Built-in bias resistors, R1 = R2 = 10kΩ
- Built-in bias resistors enable inverter circuit configuration without external input resistors (see internal circuit).
- Only ON/OFF state setting required during operation, simplifying circuit design.
- Complementary NPN type: DTD114K FRA
Anwendungen
KI-Übersetzung
- Inverter
- Interface
- Driver
C3589050 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
| Typ | Details |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541600000 |
| USHTS | 8541600080 |
| TARIC | 8541600000 |
| Typ | Details |
|---|---|
| CAHTS | 8541600010 |
| BRHTS | 85416010 |
| INHTS | 85416000 |
| MXHTS | 8541.60.01 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| DDTA143ECA-7-F | DIODES | Direkt | SOT-23 | 380 | $ 0.0525 | ||
| DDTA115ECA-7-F | DIODES | Direkt | SOT-23 | 60 | $ 0.0474 | ||
| DTB114EKT146 | ROHM | Ähnliche | TO-236-3(SOT-23-3) | 5,890 | $ 0.0975 | ||
| DTB114ECHZGT116 | ROHM | Ähnliche | TO-236-3(SOT-23-3) | 5 | $ 0.3282 | ||
| S-LDTB113ZLT1G | LRC | Ähnliche | SOT-23 | 610 | $ 0.0462 |