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Modelli EDAEasyEDA
onsemi FQD7P20TM
| Produttore | |
| Cod. Prod. | FQD7P20TM |
| Cod. LCSC | C353858 |
| Imballo | DPAK |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 200V 5.7A DPAK |
| Scheda Tecnica | onsemi FQD7P20TM |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.7A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 690mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@160V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.7A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 690mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@160V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Caratteristiche
Traduzione AI
- -5.7 A, -200 V RDS(on)=690 mΩ (Max.) @ VGS=-10 V, ID=-2.85 A
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
Applicazioni
Traduzione AI
- switched mode power supplies
- audio amplifier
- DC motor control
- variable switching power applications
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 7,145
7,145 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 0.9244 | $ 0.92 |
| 10+ | $ 0.7274 | $ 7.27 |
| 30+ | $ 0.6305 | $ 18.92 |
| 100+ | $ 0.463 | $ 46.30 |
| 500+ | $ 0.4056 | $ 202.80 |
| 1,000+ | $ 0.3744 | $ 374.40 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V | |
| Current - Continuous Drain(Id) | 5.7A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 690mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@160V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | onsemi | |
| Imballo | DPAK | |
| Output Capacitance(Coss) | 140pF | |
| Ciss-Input Capacitance | 770pF | |
| Pd - Power Dissipation | 55W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 200V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.7A | |
| Reverse Transfer Capacitance (Crss) | 35pF | |
| RDS(on) | 690mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 25nC@160V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Caratteristiche
Traduzione AI
- -5.7 A, -200 V RDS(on)=690 mΩ (Max.) @ VGS=-10 V, ID=-2.85 A
- Low Gate Charge (Typ. 19 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
Applicazioni
Traduzione AI
- switched mode power supplies
- audio amplifier
- DC motor control
- variable switching power applications
C353858 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| HSU6P20 | HUASHUO | Simili | TO-252 | 755 | $ 0.3942 | ||
| XR7P20 | XNRUSEMI | Simili | TO-252-3L | 2,355 | $0.2201 $0.2316 | ||
| 7P20 | HL | Simili | TO-252-3L | 2,305 | $ 0.1917 | ||
| FQD4P25TM_WS-VB | VBsemi Elec | Simili | TO-252 | 1 | $0.8670 $0.9126 | ||
| VBE2251K | VBsemi Elec | Simili | TO-252 | 50 | $1.3063 $1.375 |