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Modelli EDAEasyEDA
AOS AON6260
| Produttore | |
| Cod. Prod. | AON6260 |
| Cod. LCSC | C3288308 |
| Imballo | DFN-8(5x6) |
| Numero Cliente | |
| Attr. chiave | 60V 2.5V 2.4mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS |
| Scheda Tecnica | AOS AON6260 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
The AON6260 employs Trench MOSFET technology uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON), Ciss, and Coss minimizes both conduction and switching power losses. This device is ideally suited for boost converters and synchronous rectifiers in consumer, telecom, industrial power, and LED backlighting applications.
Caratteristiche
Traduzione AI
- Excellent digital pre-distortion capability
- High efficiency
- Designed for wideband operation
- Low output capacitance for enhanced Doherty application performance
- Internally matched for ease of use
Applicazioni
Traduzione AI
- RF power amplifier for base station and multi-carrier applications in the 2300 MHz to 2690 MHz frequency range
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Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit.(Solo per riferimento) | Importo totale |
|---|---|---|
| 1+ | $ 1.4319 | $ 1.43 |
| 200+ | $ 0.554 | $ 110.80 |
| 500+ | $ 0.5355 | $ 267.75 |
| 1,000+ | $ 0.5247 | $ 524.70 |
Package Standard3000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | AOS | |
| Imballo | DFN-8(5x6) | |
| Output Capacitance(Coss) | 1.39nF | |
| Pd - Power Dissipation | 7.3W;104W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 41A;85A |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| RDS(on) | 2.4mΩ@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 5.578nF | |
| Gate Charge(Qg) | 115nC@10V | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The AON6260 employs Trench MOSFET technology uniquely optimized to deliver the highest efficiency high-frequency switching performance. The combination of ultra-low RDS(ON), Ciss, and Coss minimizes both conduction and switching power losses. This device is ideally suited for boost converters and synchronous rectifiers in consumer, telecom, industrial power, and LED backlighting applications.
Caratteristiche
Traduzione AI
- Excellent digital pre-distortion capability
- High efficiency
- Designed for wideband operation
- Low output capacitance for enhanced Doherty application performance
- Internally matched for ease of use
Applicazioni
Traduzione AI
- RF power amplifier for base station and multi-carrier applications in the 2300 MHz to 2690 MHz frequency range
C3288308 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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