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EDA-ModelleEasyEDA
CRMICRO CR4N65A3K
| Hersteller | CRMICROAsian Brands |
| Herst.-Teilenr. | CR4N65A3K |
| LCSC-Nr. | C3020443 |
| Verp. | TO-251 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 650V 4A TO-251 |
| Datenblatt | CRMICRO CR4N65A3K |
| RoHS-Konformität | 2 Dokumente verfügbar |
| Alternativteile | 2 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | CRMICRO | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 41pF | |
| Pd - Power Dissipation | 75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 564pF | |
| Gate Charge(Qg) | 15.8nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | CRMICRO | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 41pF | |
| Pd - Power Dissipation | 75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 564pF | |
| Gate Charge(Qg) | 15.8nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CR4N65 A3K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
Merkmale
KI-Übersetzung
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Anwendungen
KI-Übersetzung
- Power switch circuit of adaptor and charger.
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
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Benachrichtigen
Minimum: 5Vielfaches: 5Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 5+ | $ 0.2975 | $ 1.49 |
| 50+ | $ 0.2479 | $ 12.40 |
| 150+ | $ 0.2267 | $ 34.01 |
| 525+ | $ 0.2001 | $ 105.05 |
| 2,250+ | $ 0.1883 | $ 423.68 |
| 5,250+ | $ 0.1812 | $ 951.30 |
Standardgehäuse75/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | CRMICRO | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 41pF | |
| Pd - Power Dissipation | 75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 564pF | |
| Gate Charge(Qg) | 15.8nC | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | CRMICRO | |
| Verp. | TO-251 | |
| Output Capacitance(Coss) | 41pF | |
| Pd - Power Dissipation | 75W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 650V | |
| Current - Continuous Drain(Id) | 4A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.4pF | |
| RDS(on) | 2.8Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 564pF | |
| Gate Charge(Qg) | 15.8nC | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
CR4N65 A3K, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard.
Merkmale
KI-Übersetzung
- Fast Switching
- Low ON Resistance
- Low Gate Charge
- Low Reverse transfer capacitances
- 100% Single Pulse avalanche energy Test
Anwendungen
KI-Übersetzung
- Power switch circuit of adaptor and charger.
C3020443 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| LSU05N65A | CRMICRO | Ähnliche | TO-251 | 30 | $ 0.2992 | ||
| ITU07N65R | CRMICRO | Ähnliche | TO-251 | 1 | $ 0.3802 |
2 weitere Alternativteile.Alle Ersatzprodukte anzeigen