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Infineon/CYPRESS CY7C09199V-6AC

Fabricante
N.º de pieza fab.
CY7C09199V-6AC
Nº LCSC
C2956108
Emb.
LQFP-100(14x14)
Número de Cliente
Atrib. clave
1.125Mbit Parallel Port (Parallel) LQFP-100(14x14) Memory
Hoja de DatosInfineon/CYPRESS CY7C09199V-6AC
Piezas alternativas5
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días

Especificaciones del Producto

Todo
TipoDescripción
CategoríaIntegrated Circuits (ICs)/Memory/Memory
FabricanteInfineon/CYPRESS
Emb.LQFP-100(14x14)
Operating Temperature0℃~+70℃
FeaturesAuto power-down function
Memory Size1.125Mbit
Voltage - Supply175mA;3V~3.6V
Access Time6.5ns
InterfaceParallel Port (Parallel)
Standby Supply Current10uA

Descripción

Traducción por IA

The CY7C09079V/89V/99V and CY7C09179V/89V/99V are high speed synchronous CMOS 32K, 64K, and 128K × 8/9 dual-port static RAMs. Two ports are provided, permitting independent, simultaneous access for reads and writes to any location in memory. Registers on control, address, and data lines enable minimal setup and hold times. In pipelined output mode, data is registered for decreased cycle time. Clock to data valid tCD2 = 6.5 ns [1] (pipelined). Flow-through mode can also be used to bypass the pipelined output register to eliminate access latency. In flow-through mode, data is available tan1 = 18 ns after the address is clocked into the device. Pipelined output or flow-through mode is selected via the FT/Pipe pin.

Each port contains a burst counter on the input address register. The internal write pulse width is independent of the LOW-to-HIGH transition of the clock signal. The internal write pulse is self-timed to enable the shortest possible cycle times.

A HIGH on CE0 (overline) or LOW on CE1 for one clock cycle powers down the internal circuitry to reduce the static power consumption. The use of multiple Chip Enables enables easier banking of multiple chips for depth expansion configurations. In the pipelined mode, one cycle is required with CE0 (overline) LOW and CE1 HIGH to reactivate the outputs.

Counter enable inputs are provided to stall the operation of the address input and use the internal address generated by the internal counter for fast interleaved memory applications. A port’s burst counter is loaded with the port’s Address Strobe (ADS). When the port’s Count Enable (CNTEN) is asserted, the address counter increments on each LOW-to-HIGH transition of that port’s clock signal. This reads/writes one word from/into each successive address location until CNTEN is deasserted. The counter can address the entire memory array and loops back to the start. Counter Reset (CNTRST) is used to reset the burst counter.

All parts are available in 100-pin Thin Quad Plastic Flatpack (TQFP) packages.

Características

Traducción por IA
  • True Dual-Ported memory cells which enable simultaneous access of the same memory location
  • 6 Flow-Through and Pipelined devices
  • 32K x 8/9 organizations (CY7C09079V/179V)
  • 64K x 8/9 organizations (CY7C09089V/189V)
  • 128K x 8/9 organizations (CY7C09099V/199V)
  • 3 Modes
  • Flow-Through
  • Pipelined
  • Burst
  • Pipelined output mode on both ports enables fast 100 MHz operation
  • 0.35 -micron CMOS for optimum speed and power
  • High speed clock to data access 6.5[1]/7.5[1]/9/12 ns (max.)
  • 3.3V low operating power
  • Active = 115 mA (typical)
  • Standby = 10 μA (typical)
  • Fully synchronous interface for easier operation
  • Burst counters increment addresses internally
  • Shorten cycle times
  • Minimize bus noise
  • Supported in Flow-Through and Pipelined modes
  • Dual Chip Enables for easy depth expansion
  • Automatic power down
  • Commercial and Industrial temperature ranges
  • Available in 100-pin TQFP
  • Pb-free packages available