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EDA-ModelleEasyEDA
DIODES DMT69M8LFV-7
| Hersteller | |
| Herst.-Teilenr. | DMT69M8LFV-7 |
| LCSC-Nr. | C2928690 |
| Verp. | PDFN-8(3.3x3.3) |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 60V 45A PDFN-8(3.3x3.3) |
| Datenblatt | DIODES DMT69M8LFV-7 |
| RoHS-Konformität | 5 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 438pF | |
| Ciss-Input Capacitance | 1.925nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 13.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 33.5nC@10V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 438pF | |
| Ciss-Input Capacitance | 1.925nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 13.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 33.5nC@10V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
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Beschreibung
KI-Übersetzung
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Merkmale
KI-Übersetzung
- 100% Unclamped Inductive Switching – Ensures more reliable and robust end application
- Low On-Resistance
- Low Input Capacitance
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Anwendungen
KI-Übersetzung
- Power Management Functions
- DC-DC Converters Synchronous Rectifier
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 0.6625 | $ 0.66 |
| 10+ | $ 0.5404 | $ 5.40 |
| 30+ | $ 0.4785 | $ 14.36 |
| 100+ | $ 0.4183 | $ 41.83 |
| 500+ | $ 0.3825 | $ 191.25 |
| 1,000+ | $ 0.363 | $ 363.00 |
Standardgehäuse2000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 438pF | |
| Ciss-Input Capacitance | 1.925nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 13.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 33.5nC@10V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | DIODES | |
| Verp. | PDFN-8(3.3x3.3) | |
| Output Capacitance(Coss) | 438pF | |
| Ciss-Input Capacitance | 1.925nF | |
| Pd - Power Dissipation | 42W | |
| Configuration | - | |
| Drain to Source Voltage | 60V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 45A | |
| Reverse Transfer Capacitance (Crss) | 41pF | |
| RDS(on) | 13.3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 33.5nC@10V | |
| Vgs | ±16V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Merkmale
KI-Übersetzung
- 100% Unclamped Inductive Switching – Ensures more reliable and robust end application
- Low On-Resistance
- Low Input Capacitance
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. “Green” Device
Anwendungen
KI-Übersetzung
- Power Management Functions
- DC-DC Converters Synchronous Rectifier
C2928690 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
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