Winsok Semicon WSG02P06
| Producent | Winsok SemiconAsian Brands |
| Nr części prod. | WSG02P06 |
| Nr LCSC | C2880466 |
| Opak. | SOT-223 |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 60V 2A SOT-223 |
| Karta Katalogowa | Winsok Semicon WSG02P06 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 12pF | |
| Ciss-Input Capacitance | 364pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 215mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.3nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 12pF | |
| Ciss-Input Capacitance | 364pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 215mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.3nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Opis
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package.
Funkcje
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Zastosowania
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 0.1991 | $ 0.20 |
| 10+ | $ 0.1577 | $ 1.58 |
| 30+ | $ 0.14 | $ 4.20 |
| 100+ | $ 0.1179 | $ 11.79 |
| 500+ | $ 0.108 | $ 54.00 |
| 1,000+ | $ 0.0945 | $ 94.50 |
Standardowa Obudowa3000/Full Reel | ||
Specyfikacje Produktu
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 12pF | |
| Ciss-Input Capacitance | 364pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 215mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.3nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | Winsok Semicon | |
| Opak. | SOT-223 | |
| Output Capacitance(Coss) | 12pF | |
| Ciss-Input Capacitance | 364pF | |
| Pd - Power Dissipation | 2W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 60V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 12pF | |
| RDS(on) | 215mΩ@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 6.3nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Opis
This P-Channel enhancement mode power FETs are produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low inline power loss are needed in a very small outline surface mount package.
Funkcje
- Advanced high cell density Trench technology
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- 100% EAS Guaranteed
- Green Device Available
Zastosowania
- High Frequency Point-of-Load Synchronous Buck Converter
- Networking DC-DC Power System
- Load Switch
C2880466 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
