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Modelli EDAEasyEDA
ST STB7NK80ZT4
| Produttore | |
| Cod. Prod. | STB7NK80ZT4 |
| Cod. LCSC | C283493 |
| Imballo | D2PAK |
| Numero Cliente | |
| Attr. chiave | 125W 800V 5.2A 1.8Ω@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS |
| Scheda Tecnica | ST STB7NK80ZT4 |
| Conformità RoHS | 2 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 122pF | |
| Ciss-Input Capacitance | 1.138nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 1.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 122pF | |
| Ciss-Input Capacitance | 1.138nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.2A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 1.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
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Descrizione
Traduzione AI
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
Caratteristiche
Traduzione AI
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Applicazioni
Traduzione AI
- Switching application
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100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 94
94 Pronta consegna
Minimo: 1Multiplo: 1Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 1+ | $ 1.2794 | $ 1.28 |
| 10+ | $ 1.0623 | $ 10.62 |
| 30+ | $ 0.9449 | $ 28.35 |
| 100+ | $ 0.8094 | $ 80.94 |
| 500+ | $ 0.7507 | $ 375.35 |
| 1,000+ | $ 0.7229 | $ 722.90 |
Package Standard1000/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 122pF | |
| Ciss-Input Capacitance | 1.138nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V | |
| Current - Continuous Drain(Id) | 5.2A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 1.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | ST | |
| Imballo | D2PAK | |
| Output Capacitance(Coss) | 122pF | |
| Ciss-Input Capacitance | 1.138nF | |
| Pd - Power Dissipation | 125W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 800V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 5.2A | |
| Reverse Transfer Capacitance (Crss) | 25pF | |
| RDS(on) | 1.8Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 56nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
Caratteristiche
Traduzione AI
- Extremely high dv/dt capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing repeatability
Applicazioni
Traduzione AI
- Switching application
C283493 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| STB9NK80Z | ST | Simili | D2PAK | 45 | $2.1167 $2.5198 | ||
| STB6NK90ZT4 | ST | Simili | D2PAK | 242 | $ 1.3336 | ||
| STB10N95K5 | ST | Simili | D2PAK | 531 | $ 2.6058 | ||
| MS8N100FE | MASPOWER | Simili | TO-263 | 376 | $ 1.4687 | ||
| MS6N150HGE0 | MASPOWER | Simili | TO-263 | 15 | $ 3.9674 |