SINO-IC SE20P03
| Producent | SINO-ICAsian Brands |
| Nr części prod. | SE20P03 |
| Nr LCSC | C238708 |
| Opak. | TO-252-2(DPAK) |
| Numer Klienta | |
| Klucz. cechy | MOSFET P-CH 30V 19A TO-252-2(DPAK) |
| Karta Katalogowa | SINO-IC SE20P03 |
| Części alternatywne | 2 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 345pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 19A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 750pF | |
| Gate Charge(Qg) | 21nC@5V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 345pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 19A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 750pF | |
| Gate Charge(Qg) | 21nC@5V | |
| Vgs | ±20V | |
| Type | P-Channel |
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Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 1,100
1,100 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
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| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.1768 | $ 0.88 |
| 50+ | $ 0.14 | $ 7.00 |
| 150+ | $ 0.1243 | $ 18.65 |
| 500+ | $ 0.1046 | $ 52.30 |
| 2,500+ | $ 0.0959 | $ 239.75 |
| 5,000+ | $ 0.0906 | $ 453.00 |
Standardowa Obudowa2500/Full Reel | ||
Lepsza cena za większą ilość?
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 345pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 19A | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 750pF | |
| Gate Charge(Qg) | 21nC@5V | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | SINO-IC | |
| Opak. | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 345pF | |
| Pd - Power Dissipation | 30W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 19A |
| Typ | Opis | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF | |
| RDS(on) | 50mΩ@10V | |
| Number | 1 P-Channel | |
| Input Capacitance(Ciss) | 750pF | |
| Gate Charge(Qg) | 21nC@5V | |
| Vgs | ±20V | |
| Type | P-Channel |
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C238708 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| ECCN | |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



