VBsemi Elec K3067-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | K3067-VB |
| Nº LCSC | C22389926 |
| Emb. | TO-220F |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 650V 2A TO-220F |
| Hoja de Datos | VBsemi Elec K3067-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-220F | |
| Output Capacitance(Coss) | 45pF | |
| Ciss-Input Capacitance | 1nF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descripción | |
|---|---|---|
| Current - Continuous Drain(Id) | 2A | |
| Reverse Transfer Capacitance (Crss) | 5pF | |
| RDS(on) | 4Ω@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 11nC | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Compliant to RoHS directive 2002/95/EC
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



