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VBsemi Elec STD100N03LT4-VB
| Fabricante | VBsemi ElecAsian Brands |
| N.º de pieza fab. | STD100N03LT4-VB |
| Nº LCSC | C22389189 |
| Emb. | TO-252 |
| Número de Cliente | |
| Atrib. clave | MOSFET N-CH 30V 100A TO-252 |
| Hoja de Datos | VBsemi Elec STD100N03LT4-VB |
| Piezas alternativas | 5 |
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF | |
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 227nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 227nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Aplicaciones
Traducción por IA
- OR-ing diode function
- Servers
- DC-DC converters
Garantía en cada pedido
100% Auténtico · Devolución o Reemplazo en 30 Días
Especificaciones del Producto
Todo
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF | |
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 227nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
| Tipo | Descripción | |
|---|---|---|
| Categoría | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Fabricante | VBsemi Elec | |
| Emb. | TO-252 | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 30V | |
| Output Capacitance(Coss) | 1.525nF | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 5.201nF |
| Tipo | Descripción | |
|---|---|---|
| Pd - Power Dissipation | 235W | |
| Reverse Transfer Capacitance (Crss) | 770pF | |
| RDS(on) | 3mΩ@4.5V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 227nC@10V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Type | N-Channel |
Ayuda y comentariosMostrar productos similares (0) >
Características
Traducción por IA
- Trench power MOSFET
- 100% Rg and UIS tested
- Compliant with EU RoHS Directive 2011/65/EU
Aplicaciones
Traducción por IA
- OR-ing diode function
- Servers
- DC-DC converters
Cumplimiento & Códigos de Exportación
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Detalles |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Detalles |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |