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micron MT25QL02GCBB8E12-0AAT
| Producent | |
| Nr części prod. | MT25QL02GCBB8E12-0AAT |
| Nr LCSC | C2064988 |
| Opak. | TPBGA-24(6x8) |
| Numer Klienta | |
| Klucz. cechy | 2Gb, 3V Multiple I/O Serial Flash Memory |
| Karta Katalogowa | micron MT25QL02GCBB8E12-0AAT |
| Zgodność z RoHS | 1 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | micron | |
| Opak. | TPBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 90uA | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | micron | |
| Opak. | TPBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 90uA | |
| Interface | SPI |
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Funkcje
Tłumaczenie AI
- Stacked device (four 512Mb die)
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency: 133 MHz (MAX) for all protocols in STR; 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols in both STR and DTR: Extended I/O protocol, Dual I/O protocol, Quad I/O protocol
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Additional reset pin for selected part numbers
- 3-byte and 4-byte address modes: enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory
- Readable and user-lockable
- Permanent lock with PROGRAM OTP command
- Erase capability: Die erase, Sector erase 64KB uniform granularity, Subsector erase 4KB, 32KB granularity
- Security and write protection: Volatile and nonvolatile locking and software write protection for each 64KB sector, Nonvolatile configuration locking, Password protection, Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
- Program/erase protection during power-up
- CRC detects accidental changes to raw data
- Electronic signature: JEDEC-standard 3-byte signature (BA22h), Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant
- Minimum 100,000 ERASE cycles per sector
- Data retention: 20 years (TYP)
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
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| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 59.9803 | $ 59.98 |
| 30+ | $ 56.7972 | $ 1703.92 |
Standardowa Obudowa2000/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | micron | |
| Opak. | TPBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 90uA | |
| Interface | SPI |
| Typ | Opis | |
|---|---|---|
| Kategoria | Integrated Circuits (ICs)/Memory/Memory | |
| Producent | micron | |
| Opak. | TPBGA-24(6x8) | |
| Operating Temperature | -40℃~+105℃ | |
| Features | Write enable latch;Power-on reset;Hardware write protection;Software write protection;Absolute write protection | |
| Memory Size | 2Gbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Typ | Opis | |
|---|---|---|
| Clock Frequency | 133MHz | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | - | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | 90uA | |
| Interface | SPI |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Stacked device (four 512Mb die)
- SPI-compatible serial bus interface
- Single and double transfer rate (STR/DTR)
- Clock frequency: 133 MHz (MAX) for all protocols in STR; 90 MHz (MAX) for all protocols in DTR
- Dual/quad I/O commands for increased throughput up to 90 MB/s
- Supported protocols in both STR and DTR: Extended I/O protocol, Dual I/O protocol, Quad I/O protocol
- Execute-in-place (XIP)
- PROGRAM/ERASE SUSPEND operations
- Volatile and nonvolatile configuration settings
- Software reset
- Additional reset pin for selected part numbers
- 3-byte and 4-byte address modes: enable memory access beyond 128Mb
- Dedicated 64-byte OTP area outside main memory
- Readable and user-lockable
- Permanent lock with PROGRAM OTP command
- Erase capability: Die erase, Sector erase 64KB uniform granularity, Subsector erase 4KB, 32KB granularity
- Security and write protection: Volatile and nonvolatile locking and software write protection for each 64KB sector, Nonvolatile configuration locking, Password protection, Hardware write protection: nonvolatile bits (BP[3:0] and TB) define protected area size
- Program/erase protection during power-up
- CRC detects accidental changes to raw data
- Electronic signature: JEDEC-standard 3-byte signature (BA22h), Extended device ID: two additional bytes identify device factory options
- JESD47H-compliant
- Minimum 100,000 ERASE cycles per sector
- Data retention: 20 years (TYP)
C2064988 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| MT25QL02GCBB8E12-0AUT TR | micron | Podobne | TPBGA-24(6x8) | 0 | $ 87.1069 | ||
| MT25QL02GCBB8E12-0AUT | micron | Podobne | TPBGA-24(6x8) | 0 | $ 47.644 | ||
| GD55B02GEBIRY | GigaDevice Semicon Beijing | Podobne | TFBGA-24(6x8) | 0 | $ 43.2534 | ||
| MX66L2G45GXRI00 | MXIC | Podobne | CSPBGA-24(6x8) | 0 | $ 25.0431 | ||
| S25HL02GTDPBHB050 | Infineon | Podobne | BGA-24(6x8) | 0 | $ 70.5659 |