RENESAS AT25QL321-MBUE-T

The Adesto AT25QL321 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25QL321 is ideal for data storage as well, eliminating the need for additional data storage devices. The erase block sizes of the AT25QL321 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the erase blocks, the memory space can be used much more efficiently. Because certain code modules and data storage segments must reside by themselves in their own erase regions, the wasted and unused memory space that occurs with large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density. SPI clock frequencies of up to 104MHz* are supported allowing equivalent clock rates of 266MHz for Dual Output and 532MHz for Quad Output when using the QPI and Fast Read Dual/Quad I/O instructions. The AT25QL321 array is organized into 65,536 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time using the Page Program instructions. Pages can be erased 4KB Block, 32KB Block, 64KB Block or the entire chip. The devices operate on a single 1.7V to 1.95V power supply with current consumption as low as 5mA active and 2μA for Deep Power Down. All devices offered in space-saving packages. The device supports JEDEC standard manufacturer and device identification with a 4K-bit Secured OTP.

• Single 1.7V - 2.0V Supply
• Serial Peripheral Interface (SPI) and Quad Peripheral Interface (QPI) Compatibl
• Supports SPI Modes 0 and 3
• Supports Dual Output Read and Quad I/O Program and Read
• Supports QPI Program and Read
• 104 MHz Maximum Operating Frequency
• Clock-to-Output (t_v1) of 6 ns
• Up tp 65MB/S continuous data transfer rate
• Quad Enabled (factory default setting: see Section 6.4)
• Full Chip Erase
• Flexible, Optimized Erase Architecture for Code and Data Storage Applications
• 0.6 ms Typical Page Program (256 Bytes) Time
• 60 ms Typical 4-Kbyte Block Erase Time
• 200 ms Typical 32-Kbyte Block Erase Time
• 300 ms Typical 64-Kbyte Block Erase Time
• Hardware Controlled Locking of Protected Blocks via WP Pin
• 4K-bit secured One-Time Programmable Security Register
• Hardware Write Protection
• Serial Flash Discoverable Parameters (SFDP) Register
• Flexible Programming
• Byte/Page Program (1 to 256 Bytes)
• Dual or Quad Input Byte/Page Program (1 to 256 Bytes)
• Accelerated programming mode via 9V ACC pin
• Erase/Program Suspend and Resume
• JEDEC Standard Manufacturer and Device ID Read Methodology
• Low Power Dissipation
• 2μA Deep Power-Down Current (Typical)
• 10μA Standby current (Typical)
• 5mA Active Read Current (Typical)
• Endurance: 100,000 program/erase cycles (4KB, 32KB or 64KB blocks)
• Data Retention: 20 Years
• Industrial Temperature Range: -40℃ to +85℃
• Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
• 8-lead SOIC (208-mil)
• 8-pad DFN (6x5x0.6 mm)
• 24-ball Ball Grid Array (BGA)
• 8 and 10-ball WLCSP, die Ball Grid Array (dBGA)
• 8-pad USON 3x4x0.55mm
• Die in Wafer Form