Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | R+O | |
| Verp. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA@50V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | R+O | |
| Verp. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA@50V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Thin package
- Suitable for automated placement
- Glass passivated chip junction
- Ultra-fast reverse recovery time
- Low switching loss, high efficiency
- High forward surge capability
Anwendungen
KI-Übersetzung
- Consumer Electronics
- Computing
- Automotive
- Telecommunications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 9,500
9,500 Ab Lager, sofort versandfertig
Minimum: 50Vielfaches: 50Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 50+ | $ 0.015 | $ 0.75 |
| 500+ | $ 0.0116 | $ 5.80 |
| 1,500+ | $ 0.0098 | $ 14.70 |
| 5,000+ | $ 0.0087 | $ 43.50 |
| 25,000+ | $ 0.0077 | $ 192.50 |
| 50,000+ | $ 0.0072 | $ 360.00 |
Standardgehäuse5000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | R+O | |
| Verp. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V | |
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA@50V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Hersteller | R+O | |
| Verp. | SMA(DO-214AC) | |
| Reverse Recovery Time (trr) | 50ns | |
| Operating Junction Temperature Range | -55℃~+150℃ | |
| Voltage - DC Reverse (Vr) (Max) | 50V |
| Typ | Beschreibung | |
|---|---|---|
| Diode Configuration | 1 Independent | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 1V@1A | |
| Reverse Leakage Current (Ir) | 5uA@50V | |
| Non-Repetitive Peak Forward Surge Current | 30A | |
| Current - Rectified | 1A |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Merkmale
KI-Übersetzung
- Thin package
- Suitable for automated placement
- Glass passivated chip junction
- Ultra-fast reverse recovery time
- Low switching loss, high efficiency
- High forward surge capability
Anwendungen
KI-Übersetzung
- Consumer Electronics
- Computing
- Automotive
- Telecommunications
C18199125 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Details |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



