5% OFF
- Pinout
- Footprint
Immagini a scopo illustrativo
Modelli EDAEasyEDA
Guangdong Hottech 2N7002K
| Produttore | Guangdong HottechAsian Brands |
| Cod. Prod. | 2N7002K |
| Cod. LCSC | C181083 |
| Imballo | SOT-23 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 60V 340mA SOT-23 |
| Scheda Tecnica | Guangdong Hottech 2N7002K |
| Parti alternative | 2 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Guangdong Hottech | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 340mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 5.3Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Guangdong Hottech | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 340mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 5.3Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
UTC 15N65 is an N-channel power MOSFET utilizing UTC's advanced planar stripe and DMOS technology. This technology is specifically designed to achieve the lowest on-resistance and superior switching performance. It is also capable of sustaining high energy pulses in both avalanche and commutation modes. UTC 15N65 is widely used in active power factor correction and high-efficiency switch-mode power supplies.
Caratteristiche
Traduzione AI
- Low On-Resistance: RDS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
Applicazioni
Traduzione AI
- Active power factor correction
- High-efficiency switched-mode power supplies
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 94,800
94,800 Pronta consegna
Minimo: 50Multiplo: 50Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 50+ | $ 0.0165$ 0.0157 | $ 0.79 |
| 500+ | $ 0.0131$ 0.0125 | $ 6.25 |
| 3,000+ | $ 0.0114$ 0.0109 | $ 32.70 |
| 6,000+ | $ 0.0102$ 0.0097 | $ 58.20 |
| 24,000+ | $ 0.0092$ 0.0088 | $ 211.20 |
| 51,000+ | $ 0.0087$ 0.0083 | $ 423.30 |
Package Standard3000/Full Reel | ||
Prezzo migliore per quantità maggiore?
$
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Guangdong Hottech | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 340mA | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 5.3Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | Guangdong Hottech | |
| Imballo | SOT-23 | |
| Output Capacitance(Coss) | 30pF | |
| Pd - Power Dissipation | 350mW | |
| Configuration | - | |
| Operating Temperature | - | |
| Drain to Source Voltage | 60V | |
| Current - Continuous Drain(Id) | 340mA |
| Tipo | Descrizione | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 5.3Ω@4.5V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 40pF | |
| Gate Charge(Qg) | - | |
| Vgs | ±20V | |
| Type | N-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
UTC 15N65 is an N-channel power MOSFET utilizing UTC's advanced planar stripe and DMOS technology. This technology is specifically designed to achieve the lowest on-resistance and superior switching performance. It is also capable of sustaining high energy pulses in both avalanche and commutation modes. UTC 15N65 is widely used in active power factor correction and high-efficiency switch-mode power supplies.
Caratteristiche
Traduzione AI
- Low On-Resistance: RDS(ON)
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
Applicazioni
Traduzione AI
- Active power factor correction
- High-efficiency switched-mode power supplies
C181083 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| SI2310 | Guangdong Hottech | Simili | SOT-23 | 4,010 | $0.0456 $0.0479 | ||
| IRLML0060 | Guangdong Hottech | Simili | SOT-23 | 5,670 | $0.0490 $0.0515 |
2 altri componenti alternativi.Visualizza tutti i sostituti