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MATSUKI ME12P04
| Produttore | MATSUKIAsian Brands |
| Cod. Prod. | ME12P04 |
| Cod. LCSC | C165224 |
| Imballo | TO-252-2(DPAK) |
| Numero Cliente | |
| Attr. chiave | MOSFET P-CH 40V 18.6A TO-252-2(DPAK) |
| Scheda Tecnica | MATSUKI ME12P04 |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 5 |
Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 91pF | |
| Ciss-Input Capacitance | 921pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 18.6A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 91pF | |
| Ciss-Input Capacitance | 921pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 18.6A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
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Descrizione
Traduzione AI
The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Caratteristiche
Traduzione AI
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applicazioni
Traduzione AI
- Power Management in Note book
- Portable Equipment
- Battery Powered System DC/DC Converter
- Load Switch
- LCD Display inverter
Garanzia su ogni ordine
100% Autentico · Reso o Sostituzione entro 30 Giorni
Disponibile: 3,230
3,230 Pronta consegna
Minimo: 5Multiplo: 5Unità di vendita: Piece
Aggiungi alla Lista BOM
| Qtà | Pr. unit. | Importo totale |
|---|---|---|
| 5+ | $ 0.1976 | $ 0.99 |
| 50+ | $ 0.1546 | $ 7.73 |
| 150+ | $ 0.1362 | $ 20.43 |
| 500+ | $ 0.1131 | $ 56.55 |
| 2,500+ | $ 0.1029 | $ 257.25 |
| 5,000+ | $ 0.0967 | $ 483.50 |
Package Standard2500/Full Reel | ||
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Specifiche del Prodotto
Tutto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 91pF | |
| Ciss-Input Capacitance | 921pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V | |
| Current - Continuous Drain(Id) | 18.6A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | MATSUKI | |
| Imballo | TO-252-2(DPAK) | |
| Output Capacitance(Coss) | 91pF | |
| Ciss-Input Capacitance | 921pF | |
| Pd - Power Dissipation | 25W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 40V |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 18.6A | |
| Reverse Transfer Capacitance (Crss) | 91pF | |
| RDS(on) | 80mΩ@4.5V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 20.3nC@10V | |
| Vgs | ±25V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | P-Channel |
Aiuto & FeedbackMostra prodotti simili (0) >
Descrizione
Traduzione AI
The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Caratteristiche
Traduzione AI
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Applicazioni
Traduzione AI
- Power Management in Note book
- Portable Equipment
- Battery Powered System DC/DC Converter
- Load Switch
- LCD Display inverter
C165224 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Parti alternative
| MPN | Produttore | Tipo alternativo | Imballaggio | Disponibilità | Prezzo unitario | ||
|---|---|---|---|---|---|---|---|
| AP9565K | ALLPOWER | Simili | TO-252 | 5,525 | $ 0.201 | ||
| CMD20P06 | Cmos | Simili | TO-252 | 15 | $0.1890 $0.1989 | ||
| 30P06 | GOODWORK | Simili | TO-252 | 4,345 | $0.2651 $0.279 | ||
| DMP6180SK3Q-HXY | HXY MOSFET | Simili | TO-252-2L | 95 | $0.2643 $0.2782 | ||
| HIPD650P06NM | HXY MOSFET | Simili | TO-252-2L | 102 | $0.9544 $1.0046 |