ISSI IS29GL128-70DLEB
| Fabricante | ISSIAsian Brands |
| Cód. da peça | IS29GL128-70DLEB |
| Nº LCSC | C1236852 |
| Emb. | LFBGA-64(9x9) |
| Número do Cliente | |
| Atrib. princ. | 128Mbit 2.7V~3.6V Parallel LFBGA-64(9x9) Memory RoHS |
| Folha de Dados | ISSI IS29GL128-70DLEB |
| Conformidade RoHS | 1 documentos disponíveis |
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ISSI | |
| Emb. | LFBGA-64(9x9) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 70ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | Parallel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ISSI | |
| Emb. | LFBGA-64(9x9) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrição | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 70ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | Parallel |
Descrição
The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Recursos
- Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and write operations
- Fast Access Time at -40℃ to +125℃: 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V
- VIO Input/Output 1.65V to 3.6V.
- All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input.
- 8-word/16-byte page read buffer
- 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
- Secured Silicon Region (SSR): 512-word/1024-byte sector for permanent, secure identification; 256-word Factory Locked SSR and 256-word Customer Locked SSR
- Uniform 64Kword/128KByte Sector Architecture
- Suspend and Resume commands for Program and Erase operations
- Write operation status bits indicate program and erase operation completion
- Support for CFI (Common Flash Interface)
- Volatile and non-volatile methods of Advanced Sector Protection
- WP#/ACC input: Accelerates programming time (when VHH is applied) for greater throughput during system production; Protects first or last sector regardless of sector protection settings
- Hardware reset input (RESET#) resets device
- Ready/Busy# output (RY/BY#) detects program or erase cycle completion
- Minimum 100K program/erase endurance cycles.
- Data retention: 20 years (TYP)
- Package Options: 56-pin TSOP; 64-ball 13mm x 11mm BGA; 64-ball 9mm x 9mm BGA; 56-ball 9mm x 7mm BGA (Call Factory)
- Temperature Range: Extended Grade: -40℃ to +105℃; Automotive Grade: -40℃ to +125℃
| Qtd. | Preço unit.(Apenas para referência) | Valor total |
|---|---|---|
| 1+ | $ 6.4676 | $ 6.47 |
| 260+ | $ 2.5026 | $ 650.68 |
| 520+ | $ 2.4148 | $ 1255.70 |
| 1,040+ | $ 2.3718 | $ 2466.67 |
Encapsulamento Padrão260/Full Tray | ||
Especificações do Produto
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ISSI | |
| Emb. | LFBGA-64(9x9) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles | |
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 70ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | Parallel |
| Tipo | Descrição | |
|---|---|---|
| Categoria | Integrated Circuits (ICs)/Memory/Memory | |
| Fabricante | ISSI | |
| Emb. | LFBGA-64(9x9) | |
| Operating Temperature | -40℃~+125℃ | |
| Features | - | |
| Memory Size | 128Mbit | |
| Voltage - Supply | 2.7V~3.6V | |
| Program / Erase Cycles | 100,000 cycles |
| Tipo | Descrição | |
|---|---|---|
| Clock Frequency | - | |
| Data Retention - TDR (Year) | 20 Years | |
| Block Erase Time(tBE) | - | |
| Write Cycle Time(tWC) | 70ns | |
| Page Programming Time (Tpp) | - | |
| Standby Supply Current | - | |
| Interface | Parallel |
Descrição
The IS29GL256/128 offer a fast page access time of 20ns with a corresponding random access time as fast as 70ns. It features a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes the device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Recursos
- Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and write operations
- Fast Access Time at -40℃ to +125℃: 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V
- VIO Input/Output 1.65V to 3.6V.
- All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input.
- 8-word/16-byte page read buffer
- 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
- Secured Silicon Region (SSR): 512-word/1024-byte sector for permanent, secure identification; 256-word Factory Locked SSR and 256-word Customer Locked SSR
- Uniform 64Kword/128KByte Sector Architecture
- Suspend and Resume commands for Program and Erase operations
- Write operation status bits indicate program and erase operation completion
- Support for CFI (Common Flash Interface)
- Volatile and non-volatile methods of Advanced Sector Protection
- WP#/ACC input: Accelerates programming time (when VHH is applied) for greater throughput during system production; Protects first or last sector regardless of sector protection settings
- Hardware reset input (RESET#) resets device
- Ready/Busy# output (RY/BY#) detects program or erase cycle completion
- Minimum 100K program/erase endurance cycles.
- Data retention: 20 years (TYP)
- Package Options: 56-pin TSOP; 64-ball 13mm x 11mm BGA; 64-ball 9mm x 9mm BGA; 56-ball 9mm x 7mm BGA (Call Factory)
- Temperature Range: Extended Grade: -40℃ to +105℃; Automotive Grade: -40℃ to +125℃
C1236852 Biblioteca EasyEDA
Conformidade & Códigos de Exportação
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |
| Tipo | Detalhes |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | 3A991B1A |
| CNHTS | 8542329000 |
| USHTS | 8542320071 |
| TARIC | 8542329000 |
| Tipo | Detalhes |
|---|---|
| CAHTS | 8542330000 |
| BRHTS | 85423299 |
| INHTS | 85423200 |
| MXHTS | 8542.32.99 |

