Abbildung ähnlich
EDA-ModelleEasyEDA
ST STP4NK50ZD
| Hersteller | |
| Herst.-Teilenr. | STP4NK50ZD |
| LCSC-Nr. | C10647 |
| Verp. | TO-220 |
| Kundennummer | |
| Hauptmerkm. | 45W 500V 3A 4.5V 2.7Ω@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS |
| Datenblatt | ST STP4NK50ZD |
| RoHS-Konformität | 3 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 49pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 49pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The Fast SuperMESH™ series combines the advantages of low on-resistance, Zener gate protection, and excellent dv/dt capability, while also featuring a fast body-drain recovery diode. This series complements the FDMesh™ advanced technology.
Merkmale
KI-Übersetzung
- 100% avalanche tested
- Extremely high dv/dt capability
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Excellent manufacturing repeatability
Anwendungen
KI-Übersetzung
- Switching applications
Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Nicht vorrätig
Benachrichtigen
Minimum: 1Vielfaches: 1Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis(Nur als Referenz) | Gesamtbetrag |
|---|---|---|
| 1+ | $ 1.3204 | $ 1.32 |
| 10+ | $ 1.1183 | $ 11.18 |
| 30+ | $ 1.0073 | $ 30.22 |
| 100+ | $ 0.8808 | $ 88.08 |
| 500+ | $ 0.8253 | $ 412.65 |
| 1,000+ | $ 0.799 | $ 799.00 |
Standardgehäuse50/Full Tube | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 49pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 3A | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | ST | |
| Verp. | TO-220 | |
| Output Capacitance(Coss) | 49pF | |
| Pd - Power Dissipation | 45W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 500V | |
| Current - Continuous Drain(Id) | 3A |
| Typ | Beschreibung | |
|---|---|---|
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF | |
| RDS(on) | 2.7Ω@10V | |
| Number | 1 N-channel | |
| Input Capacitance(Ciss) | 310pF | |
| Gate Charge(Qg) | 12nC@10V | |
| Vgs | ±30V | |
| Type | N-Channel |
Hilfe & FeedbackÄhnliche Produkte anzeigen (0) >
Beschreibung
KI-Übersetzung
The Fast SuperMESH™ series combines the advantages of low on-resistance, Zener gate protection, and excellent dv/dt capability, while also featuring a fast body-drain recovery diode. This series complements the FDMesh™ advanced technology.
Merkmale
KI-Übersetzung
- 100% avalanche tested
- Extremely high dv/dt capability
- Minimized gate charge
- Ultra-low intrinsic capacitance
- Excellent manufacturing repeatability
Anwendungen
KI-Übersetzung
- Switching applications
C10647 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
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|---|---|---|---|---|---|---|---|
| TK6A80E,S4X | TOSHIBA | Ähnliche | TO-220-3 | 19,952 | $ 0.6406 | ||
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| KF10N60F-U/PSF | KEC | Ähnliche | TO-220AB | 900 | $ 0.8917 | ||
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