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onsemi FDD86369
| Producent | |
| Nr części prod. | FDD86369 |
| Nr LCSC | C903591 |
| Opak. | DPAK(TO-252) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH 80V 90A DPAK(TO-252) |
| Karta Katalogowa | onsemi FDD86369 |
| Zgodność z RoHS | 4 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 2.53nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 2.53nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
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Opis
Tłumaczenie AI
UniFET™ MOSFETs are based on planar stripe and DMOS technology. These MOSFETs are designed to provide lower on-resistance, better switching performance, and higher avalanche energy ruggedness. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
Funkcje
Tłumaczenie AI
- Typical R DS(on) = 5.9 , mΩ at V GS = 10V, I D = 80A
- Typical Q g(\texttot) = 34 , \textnC at V GS = 10 , \textV, I D = 80 , \textA
- Single pulse avalanche rated
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Power System Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- 12V System Main Switch
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 2
2 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 2.0639 | $ 2.06 |
| 10+ | $ 1.7644 | $ 17.64 |
| 30+ | $ 1.5767 | $ 47.30 |
| 100+ | $ 1.3842 | $ 138.42 |
| 500+ | $ 1.2973 | $ 648.65 |
| 1,000+ | $ 1.2601 | $ 1260.10 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 2.53nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V | |
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | DPAK(TO-252) | |
| Output Capacitance(Coss) | 430pF | |
| Ciss-Input Capacitance | 2.53nF | |
| Pd - Power Dissipation | 150W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 80V |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 90A | |
| Reverse Transfer Capacitance (Crss) | 16pF | |
| RDS(on) | 7.9mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 36nC | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
UniFET™ MOSFETs are based on planar stripe and DMOS technology. These MOSFETs are designed to provide lower on-resistance, better switching performance, and higher avalanche energy ruggedness. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX power supplies, and electronic lamp ballasts.
Funkcje
Tłumaczenie AI
- Typical R DS(on) = 5.9 , mΩ at V GS = 10V, I D = 80A
- Typical Q g(\texttot) = 34 , \textnC at V GS = 10 , \textV, I D = 80 , \textA
- Single pulse avalanche rated
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Power System Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- 12V System Main Switch
C903591 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| FDD86369-F085 | onsemi | Podobne | DPAK(TO-252) | 43 | $ 1.6803 | ||
| HSU8066 | HUASHUO | Podobne | TO-252-2L | 1,876 | $ 0.45 | ||
| NSS085N100S | NH | Podobne | TO-252 | 17,340 | $ 0.3889 | ||
| OSD100N10G | OSEN | Podobne | TO-252 | 1,553 | $ 0.4205 | ||
| SFG08R06DF | ORIENTAL SEMI | Podobne | TO-252-2 | 2,500 | $ 0.5256 |