Zdjęcia poglądowe
Modele EDAEasyEDA
onsemi FDMS3624S
| Producent | |
| Nr części prod. | FDMS3624S |
| Nr LCSC | C891053 |
| Opak. | Power-56-8 |
| Numer Klienta | |
| Klucz. cechy | 25V 2 N-Channel N-Channel Power-56-8 Single FETs, MOSFETs RoHS |
| Karta Katalogowa | onsemi FDMS3624S |
| Zgodność z RoHS | 3 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-56-8 | |
| Output Capacitance(Coss) | 448pF;946pF | |
| Ciss-Input Capacitance | 1.57nF;4.045nF | |
| Pd - Power Dissipation | 2.2W;2.5W | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A;60A | |
| Reverse Transfer Capacitance (Crss) | 61pF;117pF | |
| RDS(on) | 3.8mΩ@10V;1.5mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC;59nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V;1.4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-56-8 | |
| Output Capacitance(Coss) | 448pF;946pF | |
| Ciss-Input Capacitance | 1.57nF;4.045nF | |
| Pd - Power Dissipation | 2.2W;2.5W | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A;60A | |
| Reverse Transfer Capacitance (Crss) | 61pF;117pF | |
| RDS(on) | 3.8mΩ@10V;1.5mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC;59nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V;1.4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This device integrates two dedicated N-channel MOSFETs in a dual PQFN package. The switching nodes are internally connected to simplify layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous rectifier MOSFET (Q2) are carefully designed for optimum power efficiency.
Funkcje
Tłumaczenie AI
- Q1: N-Channel
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
- Q2: N-Channel
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
- Low-inductance package minimizes rise/fall times, reducing switching losses
- Integrated MOSFETs enable optimized layout, reducing circuit inductance and switching node ringing
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Computing
- Communications
- General Point-of-Load
- Notebook VCORE
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn.(Tylko do wglądu) | Suma całkowita |
|---|---|---|
| 1+ | $ 0.8403 | $ 0.84 |
| 200+ | $ 0.3251 | $ 65.02 |
| 500+ | $ 0.314 | $ 157.00 |
| 1,000+ | $ 0.3092 | $ 309.20 |
Standardowa Obudowa3000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-56-8 | |
| Output Capacitance(Coss) | 448pF;946pF | |
| Ciss-Input Capacitance | 1.57nF;4.045nF | |
| Pd - Power Dissipation | 2.2W;2.5W | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 30A;60A | |
| Reverse Transfer Capacitance (Crss) | 61pF;117pF | |
| RDS(on) | 3.8mΩ@10V;1.5mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC;59nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V;1.4V | |
| Type | N-Channel |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Producent | onsemi | |
| Opak. | Power-56-8 | |
| Output Capacitance(Coss) | 448pF;946pF | |
| Ciss-Input Capacitance | 1.57nF;4.045nF | |
| Pd - Power Dissipation | 2.2W;2.5W | |
| Drain to Source Voltage | 25V | |
| Operating Temperature | -55℃~+150℃ |
| Typ | Opis | |
|---|---|---|
| Current - Continuous Drain(Id) | 30A;60A | |
| Reverse Transfer Capacitance (Crss) | 61pF;117pF | |
| RDS(on) | 3.8mΩ@10V;1.5mΩ@10V | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC;59nC | |
| Vgs | ±12V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V;1.4V | |
| Type | N-Channel |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
This device integrates two dedicated N-channel MOSFETs in a dual PQFN package. The switching nodes are internally connected to simplify layout and routing for synchronous buck converters. The control MOSFET (Q1) and synchronous rectifier MOSFET (Q2) are carefully designed for optimum power efficiency.
Funkcje
Tłumaczenie AI
- Q1: N-Channel
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 5.7 mΩ at VGS = 4.5 V, ID = 16 A
- Q2: N-Channel
- Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
- Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A
- Low-inductance package minimizes rise/fall times, reducing switching losses
- Integrated MOSFETs enable optimized layout, reducing circuit inductance and switching node ringing
- RoHS compliant
Zastosowania
Tłumaczenie AI
- Computing
- Communications
- General Point-of-Load
- Notebook VCORE
C891053 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |