- Rozmieszczenie wyprowadzeń
- Footprint
Zdjęcia poglądowe
Modele EDAEasyEDA
Nexperia BCP69-16,115
| Producent | |
| Nr części prod. | BCP69-16,115 |
| Nr LCSC | C75011 |
| Opak. | SOT-223-3 |
| Numer Klienta | |
| Klucz. cechy | 20V 85 2A 1 PNP PNP SOT-223-3 Single Bipolar Transistors RoHS |
| Karta Katalogowa | Nexperia BCP69-16,115 |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 4 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-223-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 85 | |
| Pd - Power Dissipation | 1.35W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-223-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 85 | |
| Pd - Power Dissipation | 1.35W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Funkcje
Tłumaczenie AI
- High current
- Three current gain selections
- High power dissipation capability
- Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
- Leadless very small SMD plastic package with medium power capability (SOT1061)
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
- Linear voltage regulators
- Power management
- High-side switches
- MOSFET drivers
- Battery-driven devices
- Amplifiers
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 10,565
10,565 W magazynie, wysyłka natychmiastowa
Minimum: 5Wielokrotność: 5Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 5+ | $ 0.3123 | $ 1.56 |
| 50+ | $ 0.246 | $ 12.30 |
| 150+ | $ 0.2176 | $ 32.64 |
| 1,000+ | $ 0.1726 | $ 172.60 |
| 2,000+ | $ 0.1569 | $ 313.80 |
| 5,000+ | $ 0.1474 | $ 737.00 |
Standardowa Obudowa1000/Full Reel | ||
Lepsza cena za większą ilość?
$
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-223-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V | |
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 85 | |
| Pd - Power Dissipation | 1.35W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/Bipolar (BJT)/Single Bipolar Transistors | |
| Producent | Nexperia | |
| Opak. | SOT-223-3 | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Collector Cutoff | 100nA | |
| Transition frequency(fT) | 40MHz | |
| Collector - Emitter Voltage VCEO | 20V |
| Typ | Opis | |
|---|---|---|
| Emitter-Base Voltage VEBO | 5V | |
| DC Current Gain | 85 | |
| Pd - Power Dissipation | 1.35W | |
| Current - Collector(Ic) | 2A | |
| Number | 1 PNP | |
| type | PNP | |
| Vce Saturation(VCE(sat)) | 500mV |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
PNP medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Funkcje
Tłumaczenie AI
- High current
- Three current gain selections
- High power dissipation capability
- Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
- Leadless very small SMD plastic package with medium power capability (SOT1061)
- AEC-Q101 qualified
Zastosowania
Tłumaczenie AI
- Linear voltage regulators
- Power management
- High-side switches
- MOSFET drivers
- Battery-driven devices
- Amplifiers
C75011 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541210000 |
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541210000 |
| BRHTS | 85412199 |
| INHTS | 85412100 |
| MXHTS | 8541.21.01 |