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MATSUKI ME4626
| Hersteller | MATSUKIAsian Brands |
| Herst.-Teilenr. | ME4626 |
| LCSC-Nr. | C709737 |
| Verp. | SOP-8 |
| Kundennummer | |
| Hauptmerkm. | MOSFET N-CH 30V 21A SOP-8 |
| Datenblatt | MATSUKI ME4626 |
| RoHS-Konformität | 1 Dokumente verfügbar |
| Alternativteile | 5 |
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 660pF | |
| Ciss-Input Capacitance | 5.73nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 660pF | |
| Ciss-Input Capacitance | 5.73nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 21A | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Beschreibung
The ME4626-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Merkmale
- RDS(ON) ≤ 3.5mΩ @ VGS = 10V
- RDS(ON) ≤ 4.5mΩ @ VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Anwendungen
- Power Management in Note book
- Battery Powered System
- DC/DC Converter
- Load Switch
Produktspezifikationen
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 660pF | |
| Ciss-Input Capacitance | 5.73nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 21A | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | MATSUKI | |
| Verp. | SOP-8 | |
| Output Capacitance(Coss) | 660pF | |
| Ciss-Input Capacitance | 5.73nF | |
| Pd - Power Dissipation | 2.5W | |
| Configuration | - | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 30V |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 21A | |
| Reverse Transfer Capacitance (Crss) | 220pF | |
| RDS(on) | 2.8mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 62nC@4.5V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Type | N-Channel |
Beschreibung
The ME4626-G is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Merkmale
- RDS(ON) ≤ 3.5mΩ @ VGS = 10V
- RDS(ON) ≤ 4.5mΩ @ VGS = 4.5V
- Super high density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
Anwendungen
- Power Management in Note book
- Battery Powered System
- DC/DC Converter
- Load Switch
C709737 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |