HXY MOSFET BSS84PH6327-HXY
| Hersteller | HXY MOSFETAsian Brands |
| Herst.-Teilenr. | BSS84PH6327-HXY |
| LCSC-Nr. | C6285752 |
| Verp. | SOT-23 |
| Kundennummer | |
| Hauptmerkm. | MOSFET P-CH 50V 0.13A SOT-23 |
| Datenblatt | HXY MOSFET BSS84PH6327-HXY |
| Alternativteile | 5 |
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 100mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 2Ω@10V | |
| Number | 1 P-Channel | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 15pF |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 100mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 2Ω@10V | |
| Number | 1 P-Channel | |
| Vgs | ±20V | |
| Type | P-Channel |
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Garantie auf jede Bestellung
100% Authentisch · 30-Tage-Rückgabe oder -Umtausch
Vorrätig: 440
440 Ab Lager, sofort versandfertig
Minimum: 20Vielfaches: 20Verkaufseinheit: Piece
Zur BOM-Liste hinzufügen
| Stk. | E-Preis | Gesamtbetrag |
|---|---|---|
| 20+ | $ 0.0228 | $ 0.46 |
| 200+ | $ 0.0179 | $ 3.58 |
| 600+ | $ 0.0153 | $ 9.18 |
| 3,000+ | $ 0.0128 | $ 38.40 |
| 9,000+ | $ 0.0114 | $ 102.60 |
| 21,000+ | $ 0.0106 | $ 222.60 |
Standardgehäuse3000/Full Reel | ||
Besserer Preis bei größerer Menge?
$
Produktspezifikationen
Alle
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 15pF | |
| Current - Continuous Drain(Id) | 100mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 2Ω@10V | |
| Number | 1 P-Channel | |
| Vgs | ±20V | |
| Type | P-Channel |
| Typ | Beschreibung | |
|---|---|---|
| Kategorie | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Hersteller | HXY MOSFET | |
| Verp. | SOT-23 | |
| Configuration | Standalone | |
| Operating Temperature | -55℃~+150℃ | |
| Drain to Source Voltage | 50V | |
| Output Capacitance(Coss) | 15pF |
| Typ | Beschreibung | |
|---|---|---|
| Current - Continuous Drain(Id) | 100mA | |
| Pd - Power Dissipation | 350mW | |
| RDS(on) | 2Ω@10V | |
| Number | 1 P-Channel | |
| Vgs | ±20V | |
| Type | P-Channel |
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C6285752 EasyEDA-Bibliothek
Compliance & Exportcodes
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Details |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Details |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Alternativteile
| MPN | Hersteller | Alternativtyp | Verpackung | Verfügbarkeit | Stückpreis | ||
|---|---|---|---|---|---|---|---|
| BSS84Q-HXY | HXY MOSFET | Ähnliche | SOT-23 | 2,840 | $0.0303 $0.0318 | ||
| LBSS84-HXY | HXY MOSFET | Ähnliche | SOT-23 | 2,840 | $ 0.024 | ||
| BSS84AK-HXY | HXY MOSFET | Ähnliche | SOT-23 | 420 | $0.0259 $0.0272 | ||
| HSBSS84LT1G | HXY MOSFET | Ähnliche | SOT-23 | 50 | $0.0669 $0.076 | ||
| HBSS84AKVL | HXY MOSFET | Ähnliche | SOT-23 | 20 | $0.0303 $0.0344 |



