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XCH GSD07N65E
| Produttore | XCHAsian Brands |
| Cod. Prod. | GSD07N65E |
| Cod. LCSC | C5375282 |
| Imballo | TO-252 |
| Numero Cliente | |
| Attr. chiave | MOSFET N-CH 650V 7A TO-252 |
| Scheda Tecnica | XCH GSD07N65E |
| Conformità RoHS | 1 documenti disponibili |
| Parti alternative | 1 |
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XCH | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 113pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 6.4pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XCH | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 113pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 6.4pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Descrizione
XCH Semiconductor has series Multi-EPI Super-Junction power MOSFET platforms for voltage up 500V to 1000 volts, both with design service and manufacturing capability, including cell, termination design and simulation. The GSx07N65E is a Low voltage N channel Multi-EPI SuperJunction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics.
Caratteristiche
- RDS(ON) = 0.7Ω @ VGS = 10V, VDS = 650V
Applicazioni
- Switching regulator
Specifiche del Prodotto
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XCH | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 113pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ | |
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 6.4pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
| Tipo | Descrizione | |
|---|---|---|
| Categoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| Produttore | XCH | |
| Imballo | TO-252 | |
| Output Capacitance(Coss) | 113pF | |
| Ciss-Input Capacitance | 400pF | |
| Pd - Power Dissipation | 35W | |
| Configuration | - | |
| Drain to Source Voltage | 650V | |
| Operating Temperature | -55℃~+150℃ |
| Tipo | Descrizione | |
|---|---|---|
| Current - Continuous Drain(Id) | 7A | |
| Reverse Transfer Capacitance (Crss) | 6.4pF | |
| RDS(on) | 700mΩ@10V | |
| Number | 1 N-channel | |
| Gate Charge(Qg) | 10.3nC@10V | |
| Vgs | ±30V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Type | N-Channel |
Descrizione
XCH Semiconductor has series Multi-EPI Super-Junction power MOSFET platforms for voltage up 500V to 1000 volts, both with design service and manufacturing capability, including cell, termination design and simulation. The GSx07N65E is a Low voltage N channel Multi-EPI SuperJunction power MOSFET sample with advanced technology to have better characteristics, such as fast switching time, low Ciss and Crss, low on resistance and excellent avalanche characteristics.
Caratteristiche
- RDS(ON) = 0.7Ω @ VGS = 10V, VDS = 650V
Applicazioni
- Switching regulator
C5375282 Libreria EasyEDA
Conformità & Codici di Esportazione
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Tipo | Dettagli |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Tipo | Dettagli |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |