MCC MCM2301-TP
| 제조업체 | |
| 제조사 품번 | MCM2301-TP |
| LCSC 번호 | C3288247 |
| 포장 | DFN2020-6L |
| 고객 번호 | |
| 주요 제원 | P-Channel, Current: 3.8A, Voltage: 20V |
| 데이터시트 | MCC MCM2301-TP |
| RoHS 준수 | 2개 문서 이용 가능 |
| 대체 부품 | 5 |
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| 제조업체 | MCC | |
| 포장 | DFN2020-6L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 55mΩ@4.5V | |
| Ciss-Input Capacitance | 492pF | |
| Type | P-Channel | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 5.8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| 제조업체 | MCC | |
| 포장 | DFN2020-6L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Pd - Power Dissipation | 1.4W |
| 타입 | 설명 | |
|---|---|---|
| RDS(on) | 55mΩ@4.5V | |
| Ciss-Input Capacitance | 492pF | |
| Type | P-Channel | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 5.8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
2SK3326 is an N-channel DMOS FET featuring low gate charge and excellent switching characteristics, designed for high-voltage applications such as switching power supplies and AC adapters.
주요 특징
AI 번역
- Trench power low-voltage MOSFET technology
- High-density cell design for ultra-low RDS(ON)
- Moisture sensitivity level 1
- Halogen-free "green" device
- Epoxy compound meets UL 94 V-0 flammability rating
- Lead-free finish / RoHS compliant
모든 주문 보장
100% 정품 · 30일 반품 또는 교환
제품 사양
전체
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| 제조업체 | MCC | |
| 포장 | DFN2020-6L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Pd - Power Dissipation | 1.4W | |
| RDS(on) | 55mΩ@4.5V | |
| Ciss-Input Capacitance | 492pF | |
| Type | P-Channel | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 5.8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| 제조업체 | MCC | |
| 포장 | DFN2020-6L | |
| Drain to Source Voltage | 20V | |
| Current - Continuous Drain(Id) | 3.8A | |
| Reverse Transfer Capacitance (Crss) | 70pF | |
| Pd - Power Dissipation | 1.4W |
| 타입 | 설명 | |
|---|---|---|
| RDS(on) | 55mΩ@4.5V | |
| Ciss-Input Capacitance | 492pF | |
| Type | P-Channel | |
| Number | 2 P-Channel | |
| Gate Charge(Qg) | 5.8nC@4.5V | |
| Operating Temperature | -55℃~+150℃ | |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
도움말 및 피드백유사 제품 보기 (0) >
개요
AI 번역
2SK3326 is an N-channel DMOS FET featuring low gate charge and excellent switching characteristics, designed for high-voltage applications such as switching power supplies and AC adapters.
주요 특징
AI 번역
- Trench power low-voltage MOSFET technology
- High-density cell design for ultra-low RDS(ON)
- Moisture sensitivity level 1
- Halogen-free "green" device
- Epoxy compound meets UL 94 V-0 flammability rating
- Lead-free finish / RoHS compliant
C3288247 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| RoHS | ROHS3 Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |



