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MICROCHIP MV1N8174US

Producent
Nr części prod.
MV1N8174US
Nr LCSC
C2632452
Opak.
-
Numer Klienta
Klucz. cechy
125VC Clamp TVS DIODE
Karta KatalogowaMICROCHIP MV1N8174US
Brak w magazynie
Powiadom mnie
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
Szt.Cena jedn.(Tylko do wglądu)Suma całkowita
1+$ 40.7669$ 40.77
200+$ 15.7769$ 3155.38
500+$ 15.223$ 7611.50
1,000+$ 14.9484$ 14948.40
Standardowa Obudowa100/Full Bag
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Specyfikacje Produktu

Wszystko
TypOpis
KategoriaCircuit Protection/Transient Voltage Suppressors (TVS)/TVS Diodes
ProducentMICROCHIP
Opak.-
Clamping Voltage125V
Operating Temperature-55℃~+175℃
Peak Pulse Current (Ipp)1.2A
Peak Pulse Power Dissipation (Ppp)150W@10/1000us
Number of Channels1
Voltage - Breakdown86.5V
typeTVS
Reverse Leakage Current (Ir)500nA
PolarityBidirectional
Reverse Stand-Off Voltage (Vrwm)75V

Opis

Tłumaczenie AI

This series of voidless-hermetically-sealed unidirectional low-capacitance Transient Voltage Suppressor (TVS) designs are ideal for protecting higher frequency applications in high-reliability applications where a failure cannot be tolerated. They include a unique rectifier diode in series and opposite direction from the TVS to achieve a very low capacitance of 4 pF. This product series provides a working peak “standoff” voltage selection from 6.8 to 170 volts with 150 watt ratings. They are very robust in hardglass construction and also use an internal metallurgical bond identified as Category 1 for high reliability applications. These devices are also available in axial leaded packages for thru-hole mounting.

Funkcje

Tłumaczenie AI
  • High surge current and peak pulse power unidirectional protection for sensitive circuits.
  • Very low capacitance for high frequency or high baud rate applications.
  • Bidirectional capability with two devices in anti-parallel.
  • Triple-layer passivation.
  • Internal “Category 1” metallurgical bonds.
  • Voidless hermetically sealed glass package. RoHS compliant versions are available.

Zastosowania

Tłumaczenie AI
  • High reliability transient protection.
  • Extremely robust construction.
  • Working peak “standoff” voltage (VW M) from 6.8 to 170 volts.
  • Available as 150 W peak pulse power (PPP) at 10/1000 μs.
  • Lowest available capacitance for 150 W rated TVS.
  • ESD and EFT protection per IEC61000 - 4 - 2 and IEC61000 - 4 - 4 respectively.
  • Secondary lightning protection per select levels in IEC61000 - 4 - 5.
  • Square - end - cap terminals for easy placement.
  • Nonsensitive to ESD per MIL - STD - 750 method 1020.
  • Inherently radiation hard as described in Microsemi MicroNote 050.