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Infineon IRF9510PBF
| 제조업체 | |
| 제조사 품번 | IRF9510PBF |
| LCSC 번호 | C2625 |
| 포장 | TO-220 |
| 고객 번호 | |
| 주요 제원 | P-Channel, Current:4.0A, Voltage:100V |
| 데이터시트 | Infineon IRF9510PBF |
| 대체 부품 | 5 |
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 94pF | |
| Ciss-Input Capacitance | 200pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 94pF | |
| Ciss-Input Capacitance | 200pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | P-Channel |
개요
The third generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB universally recognized throughout the industry.
주요 특징
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
제품 사양
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 94pF | |
| Ciss-Input Capacitance | 200pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V | |
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | P-Channel |
| 타입 | 설명 | |
|---|---|---|
| 카테고리 | Discrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs | |
| 제조업체 | Infineon | |
| 포장 | TO-220 | |
| Output Capacitance(Coss) | 94pF | |
| Ciss-Input Capacitance | 200pF | |
| Pd - Power Dissipation | 43W | |
| Configuration | - | |
| Operating Temperature | -55℃~+175℃ | |
| Drain to Source Voltage | 100V |
| 타입 | 설명 | |
|---|---|---|
| Current - Continuous Drain(Id) | 4A | |
| Reverse Transfer Capacitance (Crss) | 18pF | |
| RDS(on) | 1.2Ω@10V | |
| Number | 1 P-Channel | |
| Gate Charge(Qg) | 8.7nC@10V | |
| Vgs | ±20V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Type | P-Channel |
개요
The third generation power MOSFETs offer designers an optimal combination of fast switching, rugged device design, low on-resistance, and high cost-effectiveness. The TO-220AB package is widely preferred across all commercial-industrial applications at power dissipation levels up to approximately 50 W. Its low thermal resistance and low packaging cost have made the TO-220AB universally recognized throughout the industry.
주요 특징
- Dynamic dV/dt rated
- Repetitive avalanche rated
- P-channel
- 175 °C operating temperature
- Fast switching
- Easy to parallel
- Simple drive requirement
- Compliant to RoHS directive 2002/95/EC
C2625 EasyEDA 라이브러리
컴플라이언스 & 수출 코드
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| 타입 | 세부사항 |
|---|---|
| ECCN | - |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| 타입 | 세부사항 |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |