ISSI IS46TR16640A-15GBLA1

Hersteller	ISSIAsian Brands
Herst.-Teilenr.	IS46TR16640A-15GBLA1
LCSC-Nr.	C20428641
Verp.	96-TWBGA (9x13)
Kundennummer
Hauptmerkm.	1Gbit 1.425V~1.575V 667MHz DDR3 SDRAM 96-TWBGA (9x13) Memory RoHS
Datenblatt	ISSI IS46TR16640A-15GBLA1
RoHS-Konformität	1 Dokumente verfügbar
Alternativteile	5

Produktspezifikationen

Alle

Typ	Beschreibung
Kategorie	Integrated Circuits (ICs)/Memory/Memory
Hersteller	ISSI
Verp.	96-TWBGA (9x13)
Operating Temperature	-40℃~+95℃
Features	Auto self-refresh;Asynchronous reset function;Auto precharge function;Dynamic on-chip termination;Write leveling function;Data mask function;ZQ calibration function
Memory Size	1Gbit
Voltage - Supply	1.425V~1.575V
Clock Frequency	667MHz
Memory Format	DDR3 SDRAM

Typ	Beschreibung
Kategorie	Integrated Circuits (ICs)/Memory/Memory
Hersteller	ISSI
Verp.	96-TWBGA (9x13)
Operating Temperature	-40℃~+95℃
Features	Auto self-refresh;Asynchronous reset function;Auto precharge function;Dynamic on-chip termination;Write leveling function;Data mask function;ZQ calibration function

KI-Übersetzung

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
High speed data transfer rates with system frequency up to 933 MHz
8 internal banks for concurrent operation
8Bits pre-fetch architecture
Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and 11
Programmable Additive Latency: 0, CL-1, CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) Refresh Interval: 7.8 us (8192 cycles/64 ms) TC = -40℃ to 85℃; 3.9 us (8192 cycles/32 ms) TC = 85℃ to 105℃
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength: RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Operating temperature: Commercial (TC = 0℃ to +95℃); Industrial (TC = -40℃ to +95℃); Automotive, A1 (TC = -40℃ to +95℃); Automotive, A2 (TC = -40℃ to +105℃)

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Alle

Typ	Beschreibung
Kategorie	Integrated Circuits (ICs)/Memory/Memory
Hersteller	ISSI
Verp.	96-TWBGA (9x13)
Operating Temperature	-40℃~+95℃
Features	Auto self-refresh;Asynchronous reset function;Auto precharge function;Dynamic on-chip termination;Write leveling function;Data mask function;ZQ calibration function
Memory Size	1Gbit
Voltage - Supply	1.425V~1.575V
Clock Frequency	667MHz
Memory Format	DDR3 SDRAM

Typ	Beschreibung
Kategorie	Integrated Circuits (ICs)/Memory/Memory
Hersteller	ISSI
Verp.	96-TWBGA (9x13)
Operating Temperature	-40℃~+95℃
Features	Auto self-refresh;Asynchronous reset function;Auto precharge function;Dynamic on-chip termination;Write leveling function;Data mask function;ZQ calibration function

KI-Übersetzung

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
High speed data transfer rates with system frequency up to 933 MHz
8 internal banks for concurrent operation
8Bits pre-fetch architecture
Programmable CAS Latency: 5, 6, 7, 8, 9, 10 and 11
Programmable Additive Latency: 0, CL-1, CL-2
Programmable CAS WRITE latency (CWL) based on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT) Refresh Interval: 7.8 us (8192 cycles/64 ms) TC = -40℃ to 85℃; 3.9 us (8192 cycles/32 ms) TC = 85℃ to 105℃
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8 only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength: RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Operating temperature: Commercial (TC = 0℃ to +95℃); Industrial (TC = -40℃ to +95℃); Automotive, A1 (TC = -40℃ to +95℃); Automotive, A2 (TC = -40℃ to +105℃)