Shikues SS320F
| Producent | ShikuesAsian Brands |
| Nr części prod. | SS320F |
| Nr LCSC | C183465 |
| Opak. | SMAF |
| Numer Klienta | |
| Klucz. cechy | DIODE SCHOTTKY 200V SMAF |
| Karta Katalogowa | Shikues SS320F |
| Zgodność z RoHS | 1 dokumentów dostępnych |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Shikues | |
| Opak. | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 70A | |
| Current - Rectified | 3A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Shikues | |
| Opak. | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 70A | |
| Current - Rectified | 3A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power consumption, high efficiency
- High forward surge current capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Shikues | |
| Opak. | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 200V | |
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 70A | |
| Current - Rectified | 3A |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Diodes/Rectifiers/Single Diodes | |
| Producent | Shikues | |
| Opak. | SMAF | |
| Operating Junction Temperature Range | -55℃~+125℃ | |
| Diode Configuration | Standalone | |
| Voltage - DC Reverse (Vr) (Max) | 200V |
| Typ | Opis | |
|---|---|---|
| Pd - Power Dissipation | - | |
| Voltage - Forward(Vf@If) | 950mV@3A | |
| Reverse Leakage Current (Ir) | 300uA@200V | |
| Non-Repetitive Peak Forward Surge Current | 70A | |
| Current - Rectified | 3A |
Pomoc i opiniePokaż podobne produkty (0) >
Funkcje
Tłumaczenie AI
- Metal-silicon junction, majority carrier conduction
- Surface mount application
- Low power consumption, high efficiency
- High forward surge current capability
- Suitable for low-voltage high-frequency inverters, freewheeling, and polarity protection applications
C183465 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | - |
| CNHTS | 8541100000 |
| USHTS | 8541100040 |
| TARIC | 8541100000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541100090 |
| BRHTS | 85411011 |
| INHTS | 85411000 |
| MXHTS | 8541.10.01 |



