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TI CSD87350Q5D
| Producent | |
| Nr części prod. | CSD87350Q5D |
| Nr LCSC | C140356 |
| Opak. | SON-8(5x6) |
| Numer Klienta | |
| Klucz. cechy | MOSFET N-CH ARR 30V 40A SON-8(5x6) |
| Karta Katalogowa | TI CSD87350Q5D |
| Zgodność z RoHS | 2 dokumentów dostępnych |
| Części alternatywne | 5 |
Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | TI | |
| Opak. | SON-8(5x6) | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| Ciss-Input Capacitance | 3.835nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.69nF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A | |
| RDS(on) | 6.8mΩ@4.5V | |
| Pd - Power Dissipation | 12W | |
| Type | N-Channel | |
| Configuration | Half-Bridge | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | TI | |
| Opak. | SON-8(5x6) | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| Ciss-Input Capacitance | 3.835nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.69nF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 6.8mΩ@4.5V | |
| Pd - Power Dissipation | 12W | |
| Type | N-Channel | |
| Configuration | Half-Bridge | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The CSD87350Q5D NexFET power block is an optimized solution for synchronous buck applications, delivering high current, high efficiency, and high frequency performance in a compact 5mm x 6mm footprint. Optimized for 5V gate drive applications, it provides a flexible solution for high-density power delivery when paired with any 5V gate drive from an external controller or driver.
Funkcje
Tłumaczenie AI
- Half-bridge power block
- 90% system efficiency at 25A
- Operating current up to 40A
- High-frequency operation (up to 1.5 MHz)
- High-density SON 5mm x 6mm package
- Optimized for 5V gate drive
- Low switching losses
- Ultra-low inductance package
- RoHS compliant
- Halogen-free
- Lead-free lead finish
Zastosowania
Tłumaczenie AI
- Synchronous buck converter
- High-frequency applications
- High-current, low-duty-cycle applications
- Multiphase synchronous buck converter
- Point-of-load DC-DC converter
- IMVP, VRM, and VRD applications
Gwarancja na każde zamówienie
100% Oryginalne · Zwrot lub Wymiana w ciągu 30 Dni
Na stanie: 2,761
2,761 W magazynie, wysyłka natychmiastowa
Minimum: 1Wielokrotność: 1Jednostka sprzedaży: Piece
Dodaj do Listy BOM
| Szt. | Cena jedn. | Suma całkowita |
|---|---|---|
| 1+ | $ 1.9404 | $ 1.94 |
| 10+ | $ 1.6749 | $ 16.75 |
| 30+ | $ 1.5094 | $ 45.28 |
| 100+ | $ 1.3406 | $ 134.06 |
| 500+ | $ 1.1833 | $ 591.65 |
| 1,000+ | $ 1.1505 | $ 1150.50 |
Standardowa Obudowa2500/Full Reel | ||
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Specyfikacje Produktu
Wszystko
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | TI | |
| Opak. | SON-8(5x6) | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| Ciss-Input Capacitance | 3.835nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.69nF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A | |
| RDS(on) | 6.8mΩ@4.5V | |
| Pd - Power Dissipation | 12W | |
| Type | N-Channel | |
| Configuration | Half-Bridge | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
| Typ | Opis | |
|---|---|---|
| Kategoria | Discrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays | |
| Producent | TI | |
| Opak. | SON-8(5x6) | |
| Reverse Transfer Capacitance (Crss) | 65pF | |
| Ciss-Input Capacitance | 3.835nF | |
| Operating Temperature | -55℃~+150℃ | |
| Output Capacitance(Coss) | 1.69nF | |
| Drain to Source Voltage | 30V | |
| Current - Continuous Drain(Id) | 40A |
| Typ | Opis | |
|---|---|---|
| RDS(on) | 6.8mΩ@4.5V | |
| Pd - Power Dissipation | 12W | |
| Type | N-Channel | |
| Configuration | Half-Bridge | |
| Number | 2 N-Channel | |
| Gate Charge(Qg) | 26nC | |
| Vgs | ±8V | |
| Gate Threshold Voltage (Vgs(th)) | 2.1V |
Pomoc i opiniePokaż podobne produkty (0) >
Opis
Tłumaczenie AI
The CSD87350Q5D NexFET power block is an optimized solution for synchronous buck applications, delivering high current, high efficiency, and high frequency performance in a compact 5mm x 6mm footprint. Optimized for 5V gate drive applications, it provides a flexible solution for high-density power delivery when paired with any 5V gate drive from an external controller or driver.
Funkcje
Tłumaczenie AI
- Half-bridge power block
- 90% system efficiency at 25A
- Operating current up to 40A
- High-frequency operation (up to 1.5 MHz)
- High-density SON 5mm x 6mm package
- Optimized for 5V gate drive
- Low switching losses
- Ultra-low inductance package
- RoHS compliant
- Halogen-free
- Lead-free lead finish
Zastosowania
Tłumaczenie AI
- Synchronous buck converter
- High-frequency applications
- High-current, low-duty-cycle applications
- Multiphase synchronous buck converter
- Point-of-load DC-DC converter
- IMVP, VRM, and VRD applications
C140356 Biblioteka EasyEDA
Zgodność & Kody Eksportowe
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
| Typ | Szczegóły |
|---|---|
| RoHS | ROHS Compliant |
| ECCN | EAR99 |
| CNHTS | 8541290000 |
| USHTS | 8541290095 |
| TARIC | 8541290000 |
| Typ | Szczegóły |
|---|---|
| CAHTS | 8541290000 |
| BRHTS | 85412910 |
| INHTS | 85412900 |
| MXHTS | 8541.29.99 |
Części alternatywne
| MPN | Producent | Typ alternatywny | Opakowanie | Dostępność | Cena jednostkowa | ||
|---|---|---|---|---|---|---|---|
| BSC0921NDI | Infineon | Podobne | DFN-8(6x5) | 10 | $ 1.1167 | ||
| NTMFD5C446NLT1G | onsemi | Podobne | DFN-8(4.9x5.9) | 18 | $ 3.3257 | ||
| SIZ998BDT-T1-GE3 | VISHAY | Podobne | PowerPAIR-8(6x5) | 4 | $ 1.9793 | ||
| NVMFD5C668NLT1G | onsemi | Podobne | DFN-8(5x6) | 9 | $ 2.5968 | ||
| PJM65DN30DN | PJSEMI | Podobne | PDFN-8L(5x6) | 200 | $ 0.3052 |