Silicon Carbide Field Effect Transistor (MOSFET)
The Results of Silicon Carbide Field Effect Transistor (MOSFET) 9
Package
Continuous Drain Current
Power Dissipation
FET Type
Drain - Source Breakdown Voltage
Results: 9
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Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
FET Type
Power Dissipation
Continuous Drain Current
Drain - Source Breakdown Voltage
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
LCSC Part#
Package
Packaging
FET Type
Power Dissipation
Continuous Drain Current
Drain - Source Breakdown Voltage
Min: 1
Mult: 1
10
(++)
In Stock
LSIC1MO170E0750Littelfuse
TO-247AD Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3290778TO-247ADTube-packed1 N-channel60W6.2A1700V
Min: 1
Mult: 1
0
LSIC1MO120E0160Littelfuse
TO-247AD Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3281147TO-247ADTube-packed1 N-channel125W22A1200V
Min: 1
Mult: 1
0
LSIC1MO120G0160Littelfuse
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3281107TO-247-4LTube-packed1 N-channel125W22A1200V
Min: 1
Mult: 1
0
LSIC1MO120G0040Littelfuse
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3281108TO-247-4LTube-packed1 N-channel357W70A1200V
Min: 1
Mult: 1
0
LSIC1MO170T0750Littelfuse
TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3281638TO-263-7Tube-packed1 N-channel65W-1700V
Min: 1
Mult: 1
0
LSIC1MO120G0025Littelfuse
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3290757TO-247-4LTube-packed1 N-channel500W100A1200V
Min: 1
Mult: 1
0
LSIC1MO120G0120Littelfuse
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3281112TO-247-4LTube-packed1 N-channel156W27A1200V
Min: 1
Mult: 1
0
LSIC1MO120G0080Littelfuse
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3290754TO-247-4LTube-packed1 N-channel214W39A1200V
Min: 1
Mult: 1
0
LSIC1MO120E0120Littelfuse
TO-247AD Silicon Carbide Field Effect Transistor (MOSFET) ROHS
C3281150TO-247ADTube-packed1 N-channel-27A1200V