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ST STH60N099DM9-2AG product image
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ST STH60N099DM9-2AGRoHS

Manufacturer
ST
MPN
STH60N099DM9-2AG
LCSC Part #
C23984841
Packaging
H2PAK-2
Customer #
Key Attributes
MOSFET N-CH 600V 27A H2PAK-2
Datasheetpdf iconST STH60N099DM9-2AG
In-Stock: 30
30 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 4.0835$ 4.08
10+$ 3.9875$ 39.88
30+$ 3.9224$ 117.67
100+$ 3.8589$ 385.89
Standard Packaging1000/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/Single FETs, MOSFETs
ManufacturerST
PackagingH2PAK-2
Drain to Source Voltage600V
Current - Continuous Drain(Id)27A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation179W
RDS(on)99mΩ@10V
Number1 N-channel
Gate Charge(Qg)44nC@10V
TypeN-Channel
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Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging1000
Sales UnitPiece

Introduction

AI Translation

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The fast-recovery diode featuring very low recovery charge (Ωrr), time (trr) and RDS(on) makes this fast-switching super-junction Power MOSFET tailored for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Features

AI Translation
  • Automotive-grade N-channel 600 V, 76 mΩ typ., 27 A MDmesh DM9 Power MOSFET in an H²PAK-2 package
  • AEC-Q101 qualified
  • Fast-recovery body diode
  • Worldwide best RDS(on) per area among silicon-based fast recovery devices
  • Low gate charge, input capacitance and resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggednes

Applications

AI Translation
  • High efficiency switching applications