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Qorvo TQP3M9036 product image
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Qorvo TQP3M9036RoHS

Manufacturer
MPN
TQP3M9036
LCSC Part #
C920261
Packaging
DFN-8-EP(2x2)
Customer #
Key Attributes
Ultra-Low Noise, High Linearity LNA
Datasheetpdf iconQorvo TQP3M9036
In-Stock: 671
671 In stock, ships now
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QtyUnit PriceTotal Amount
1+$ 3.1122$ 3.11
10+$ 2.6563$ 26.56
30+$ 2.3837$ 71.51
100+$ 2.1094$ 210.94
500+$ 1.9829$ 991.45
1,000+$ 1.9261$ 1926.10
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryRF and Wireless/RF Amplifiers
ManufacturerQorvo
PackagingDFN-8-EP(2x2)
Gain19.8dB
Operating Temperature-40℃~+105℃
Voltage - Supply3.3V~5.25V
Noise Figure0.45dB
FeaturesInput matching integration;Output matching integration;Integrated bias circuit;Fast enable control
P1dB20dBm
Current - Supply-

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

The TQP3M9036 is a high linearity, ultra-low noise gain block amplifier in a small 2x2 mm surface-mount package. At 900 MHz, the amplifier typically provides high 19.8 dB gain, +36 dBm OIP3, and 0.45 dB Noise Figure while drawing 68 mA current from a 5V supply. The amplifier does not require any negative supplies for operation and can be biased from positive supply rails from 3.3 to 5 V. The device is housed in a lead-free/green/RoHS-compliant industry-standard 2x2 mm package. The TQP3M9036 is internally matched using a highperformance E-pHEMT process and only requires 4 external components for operation from a single positive supply: an external RF choke and blocking/bypass capacitors. The low noise amplifier contains an internal active bias to maintain high performance over temperature and integrates a shut-down biasing capability for TDD applications. The TQP3M9036 covers the 50−2000 MHz frequency band and is targeted for wireless infrastructure. The LNA is pin compatible with the high-band, 1500−2700 MHz TQP3M9037.

Features

AI Translation
  • 50−2000 MHz Operational Bandwidth
  • Ultra-low noise figure, 0.45 dB NF at 900 MHz
  • High gain, 19.8 dB Gain at 900 MHz
  • High linearity, +36 dBm Output IP3
  • High input power ruggedness, >22 dBm PIN, MAX
  • Unconditionally stable
  • Integrated on-chip matching, 50 ohm in/out
  • Integrated active bias
  • Integrated shutdown control pin
  • 3−5 V positive supply voltage: −Vgg not required
  • Pin compatible with high-band TQP3M9037

Applications

AI Translation
  • Repeaters
  • Mobile Infrastructure LTE / WCDMA / CDMA / GSM
  • General Purpose Wireless TDD or FDD systems