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onsemi NRVBS3100T3GRoHS

Manufacturer
MPN
NRVBS3100T3G
LCSC Part #
C905000
Packaging
SMC
Customer #
Key Attributes
DIODE SCHOTTKY 100V SMC
Datasheetpdf icononsemi NRVBS3100T3G
In-Stock: 2,035
2,035 In stock, ships now
Add to BOM List
QtyUnit PriceTotal Amount
1+$ 0.5209$ 0.52
10+$ 0.4655$ 4.66
30+$ 0.4386$ 13.16
100+$ 0.4117$ 41.17
500+$ 0.3958$ 197.90
1,000+$ 0.3879$ 387.90
Standard Packaging2500/Full Reel
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Products Specifications

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TypeDescription
CategoryDiscrete Semiconductors/Diodes/Rectifiers/Single Diodes
Manufactureronsemi
PackagingSMC
Operating Junction Temperature Range-65℃~+175℃
Voltage - DC Reverse (Vr) (Max)100V
Diode Configuration1 Independent
Voltage - Forward(Vf@If)900mV@6A
Reverse Leakage Current (Ir)50uA@100V
Non-Repetitive Peak Forward Surge Current130A
Current - Rectified3A

Additional Information

TypeDetails
Minimum1
Multiple1
Standard Packaging2500
Sales UnitPiece

Introduction

AI Translation

This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.

Features

AI Translation
  • Small Compact Surface Mountable Package with J-Bend Leads
  • Rectangular Package for Automated Handling
  • Highly Stable Oxide Passivated Junction
  • Excellent Ability to Withstand Reverse Avalanche Energy Transients
  • Guard-Ring for Stress Protection
  • NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
  • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant