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onsemi FDS3890RoHS

Manufacturer
onsemi
MPN
FDS3890
LCSC Part #
C903620
Packaging
SO-8
Customer #
Key Attributes
MOSFET N-CH ARR 80V 4.7A SO-8
Datasheetpdf icononsemi FDS3890
In-Stock: 10
10 In stock, ships now
Minimum: 1Multiple: 1Sales Unit: Piece
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QtyUnit PriceTotal Amount
1+$ 1.9528$ 1.95
10+$ 1.9204$ 19.20
30+$ 1.9009$ 57.03
100+$ 1.8797$ 187.97
Standard Packaging2500/Full Reel
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Products Specifications

All
TypeDescription
CategoryDiscrete Semiconductors/Transistors/FETs, MOSFETs/FET, MOSFET Arrays
Manufactureronsemi
PackagingSO-8
Current - Continuous Drain(Id)4.7A
RDS(on)44mΩ@10V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage80V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)50pF
Number2 N-Channel
Input Capacitance(Ciss)1.18nF
Gate Charge(Qg)35nC@10V
Vgs±20V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)171pF
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Introduction

AI Translation

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

Features

AI Translation
  • This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
  • These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

Applications

AI Translation
  • Automotive engine control
  • Powertrain management
  • Solenoid and motor drivers
  • Electronic steering systems
  • Integrated starter-generator
  • 12V system main switch